TY - GEN
T1 - Properties investigation of thin films photovoltaic hetero-structures
AU - Axelevitch, Alexander
AU - Golan, Gady
AU - Azoulay, Jacob
PY - 2006
Y1 - 2006
N2 - This paper presents an experimental investigation of photovoltaic (PV) properties in heterostmctures consisting of indium oxide and amorphous silicon thin films, grown on a single crystalline p-type silicon and polyimide flexible substrates. Both thin films: In2O3 and a-Si were deposited by magnetron sputtering. Such heterostructure thin film systems are attractive because of their ability to convert solar energy into electrical one. Grown heterostmctures were treated by simultaneous influence of an electron beam and high energetic photons with energy more than 1.5 eV in the so called vacuum photo-thermal processing (VPP). Silicon samples of 100 Ω/sq and 45 Ω/sq were selected as substrates. Thin films deposition was done in argon atmosphere by DC magnetron sputtering. It is shown that: Open circuit voltage of the proposed structure may reach up to ∼ 035 V, Short circuit current was of no more then 10-7 A, Polyimide materials may be used as substrates for PV thin film deposition structures, VPP dramatically varies the photovoltaic properties of the heterostructure.
AB - This paper presents an experimental investigation of photovoltaic (PV) properties in heterostmctures consisting of indium oxide and amorphous silicon thin films, grown on a single crystalline p-type silicon and polyimide flexible substrates. Both thin films: In2O3 and a-Si were deposited by magnetron sputtering. Such heterostructure thin film systems are attractive because of their ability to convert solar energy into electrical one. Grown heterostmctures were treated by simultaneous influence of an electron beam and high energetic photons with energy more than 1.5 eV in the so called vacuum photo-thermal processing (VPP). Silicon samples of 100 Ω/sq and 45 Ω/sq were selected as substrates. Thin films deposition was done in argon atmosphere by DC magnetron sputtering. It is shown that: Open circuit voltage of the proposed structure may reach up to ∼ 035 V, Short circuit current was of no more then 10-7 A, Polyimide materials may be used as substrates for PV thin film deposition structures, VPP dramatically varies the photovoltaic properties of the heterostructure.
KW - Amorphous Si
KW - Magnetron sputtering
KW - Photovoltaic heterostructures
KW - VPP
UR - http://www.scopus.com/inward/record.url?scp=84898406178&partnerID=8YFLogxK
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AN - SCOPUS:84898406178
SN - 9806560833
SN - 9789806560833
T3 - CITSA 2006 - 3rd Int. Conf. on Cybernetics and Information Technol., Systems and Applications, Jointly with the 4th Int. Conf. on Computing, Communications and Control Technologies, CCCT 2006 - Proc.
SP - 28
EP - 33
BT - CITSA 2006 - 3rd Int. Conf. on Cybernetics and Information Technol., Systems and Applications, Jointly with the 4th Int. Conf. on Computing, Communications and Control Technologies, CCCT 2006 - Proc.
T2 - 3rd International Conference on Cybernetics and Information Technologies, Systems and Applications, CITSA 2006, Jointly with the 4th International Conference on Computing, Communications and Control Technologies, CCCT 2006
Y2 - 20 July 2006 through 23 July 2006
ER -