Product reliability trends, derating considerations and failure mechanisms with scaled CMOS

Mark White; Duc Vu; Duc Nguyen; Ron Ruiz; Chen Yuan; Joseph B. Bernstein

doi:10.1109/IRWS.2006.305234

Product reliability trends, derating considerations and failure mechanisms with scaled CMOS

Mark White, Duc Vu, Duc Nguyen, Ron Ruiz, Chen Yuan, Joseph B. Bernstein

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

As microelectronics are scaled into the deep sub-micron regime, space and aerospace users of advanced technology CMOS are reassessing how scaling effects impact long-term product reliability. The effects of Electromigration (EM), Time-Dependent-Dielectric-Breakdown (TDDB) and Hot Carrier Degradation (HCI and NBTI) wearout mechanisms on scaled technologies and product reliability are investigated, accelerated stress testing across several technology nodes is performed, and FA is conducted to confirm the failure mechanism(s).

Original language	English
Title of host publication	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	156-159
Number of pages	4
ISBN (Print)	1424402964, 9781424402960
DOIs	https://doi.org/10.1109/IRWS.2006.305234
State	Published - 2006
Externally published	Yes
Event	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW - South Lake Tahoe, CA, United States Duration: 16 Oct 2006 → 19 Oct 2006

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report
ISSN (Print)	1930-8841
ISSN (Electronic)	2374-8036

Conference

Conference	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW
Country/Territory	United States
City	South Lake Tahoe, CA
Period	16/10/06 → 19/10/06

Access to Document

10.1109/IRWS.2006.305234

Cite this

White, M., Vu, D., Nguyen, D., Ruiz, R., Yuan, C., & Bernstein, J. B. (2006). Product reliability trends, derating considerations and failure mechanisms with scaled CMOS. In 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW (pp. 156-159). Article 4098711 (IEEE International Integrated Reliability Workshop Final Report). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRWS.2006.305234

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title = "Product reliability trends, derating considerations and failure mechanisms with scaled CMOS",

abstract = "As microelectronics are scaled into the deep sub-micron regime, space and aerospace users of advanced technology CMOS are reassessing how scaling effects impact long-term product reliability. The effects of Electromigration (EM), Time-Dependent-Dielectric-Breakdown (TDDB) and Hot Carrier Degradation (HCI and NBTI) wearout mechanisms on scaled technologies and product reliability are investigated, accelerated stress testing across several technology nodes is performed, and FA is conducted to confirm the failure mechanism(s).",

author = "Mark White and Duc Vu and Duc Nguyen and Ron Ruiz and Chen Yuan and Bernstein, {Joseph B.}",

year = "2006",

doi = "10.1109/IRWS.2006.305234",

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isbn = "1424402964",

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booktitle = "2006 IEEE International Integrated Reliability Workshop Final Report, IIRW",

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note = "2006 IEEE International Integrated Reliability Workshop Final Report, IIRW ; Conference date: 16-10-2006 Through 19-10-2006",

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White, M, Vu, D, Nguyen, D, Ruiz, R, Yuan, C & Bernstein, JB 2006, Product reliability trends, derating considerations and failure mechanisms with scaled CMOS. in 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW., 4098711, IEEE International Integrated Reliability Workshop Final Report, Institute of Electrical and Electronics Engineers Inc., pp. 156-159, 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW, South Lake Tahoe, CA, United States, 16/10/06. https://doi.org/10.1109/IRWS.2006.305234

Product reliability trends, derating considerations and failure mechanisms with scaled CMOS. / White, Mark; Vu, Duc; Nguyen, Duc et al.
2006 IEEE International Integrated Reliability Workshop Final Report, IIRW. Institute of Electrical and Electronics Engineers Inc., 2006. p. 156-159 4098711 (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - As microelectronics are scaled into the deep sub-micron regime, space and aerospace users of advanced technology CMOS are reassessing how scaling effects impact long-term product reliability. The effects of Electromigration (EM), Time-Dependent-Dielectric-Breakdown (TDDB) and Hot Carrier Degradation (HCI and NBTI) wearout mechanisms on scaled technologies and product reliability are investigated, accelerated stress testing across several technology nodes is performed, and FA is conducted to confirm the failure mechanism(s).

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White M, Vu D, Nguyen D, Ruiz R, Yuan C, Bernstein JB. Product reliability trends, derating considerations and failure mechanisms with scaled CMOS. In 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW. Institute of Electrical and Electronics Engineers Inc. 2006. p. 156-159. 4098711. (IEEE International Integrated Reliability Workshop Final Report). doi: 10.1109/IRWS.2006.305234

Product reliability trends, derating considerations and failure mechanisms with scaled CMOS

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