Polarization-independent intersubband based GaInAsN quantum-well photodetector with dominant detection at 1.42 μm

Asaf Albo; Alon Vardi; Dan Fekete; Gad Bahir

doi:10.1063/1.3089868

Polarization-independent intersubband based GaInAsN quantum-well photodetector with dominant detection at 1.42 μm

Asaf Albo, Alon Vardi, Dan Fekete, Gad Bahir

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We report on a room temperature polarization-independent intersubband photocurrent (PC) in quantum-well infrared photodetector based on a GaInAsN/GaAs standard multiple-quantum-well structure. The dominant room temperature PC is peaked at 1.42 μm with peak responsivity of 2 A/W and exhibits similar intensities in TM and TE polarizations. The structure's energy levels were analyzed using a ten band k·p model. As a result of this analysis the 1.42 μm dominant PC transition is attributed to a transition from the fundamental E_1- electron level into the localized quasicontinuum state formed by the unconfined E₂₊ electron energy level.

Original language	English
Article number	093503
Journal	Applied Physics Letters
Volume	94
Issue number	9
DOIs	https://doi.org/10.1063/1.3089868
State	Published - 2009
Externally published	Yes

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title = "Polarization-independent intersubband based GaInAsN quantum-well photodetector with dominant detection at 1.42 μm",

abstract = "We report on a room temperature polarization-independent intersubband photocurrent (PC) in quantum-well infrared photodetector based on a GaInAsN/GaAs standard multiple-quantum-well structure. The dominant room temperature PC is peaked at 1.42 μm with peak responsivity of 2 A/W and exhibits similar intensities in TM and TE polarizations. The structure's energy levels were analyzed using a ten band k·p model. As a result of this analysis the 1.42 μm dominant PC transition is attributed to a transition from the fundamental E1- electron level into the localized quasicontinuum state formed by the unconfined E2+ electron energy level.",

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doi = "10.1063/1.3089868",

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AU - Albo, Asaf

AU - Vardi, Alon

AU - Fekete, Dan

AU - Bahir, Gad

PY - 2009

Y1 - 2009

N2 - We report on a room temperature polarization-independent intersubband photocurrent (PC) in quantum-well infrared photodetector based on a GaInAsN/GaAs standard multiple-quantum-well structure. The dominant room temperature PC is peaked at 1.42 μm with peak responsivity of 2 A/W and exhibits similar intensities in TM and TE polarizations. The structure's energy levels were analyzed using a ten band k·p model. As a result of this analysis the 1.42 μm dominant PC transition is attributed to a transition from the fundamental E1- electron level into the localized quasicontinuum state formed by the unconfined E2+ electron energy level.

AB - We report on a room temperature polarization-independent intersubband photocurrent (PC) in quantum-well infrared photodetector based on a GaInAsN/GaAs standard multiple-quantum-well structure. The dominant room temperature PC is peaked at 1.42 μm with peak responsivity of 2 A/W and exhibits similar intensities in TM and TE polarizations. The structure's energy levels were analyzed using a ten band k·p model. As a result of this analysis the 1.42 μm dominant PC transition is attributed to a transition from the fundamental E1- electron level into the localized quasicontinuum state formed by the unconfined E2+ electron energy level.

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Polarization-independent intersubband based GaInAsN quantum-well photodetector with dominant detection at 1.42 μm

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