Polarization dependence of spectral transmission and photoconductive response of a p-doped multiple quantum well structure

A. Fenigstein; E. Finkman; G. Bahir; S. E. Schacham

doi:10.1063/1.357667

Polarization dependence of spectral transmission and photoconductive response of a p-doped multiple quantum well structure

A. Fenigstein, E. Finkman, G. Bahir, S. E. Schacham

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A comparison between the optical transmission and the photoconductive response of p-type quantum well infrared photodetectors is demonstrated. The dependence on polarization was found to be different for these two processes. Light polarized perpendicular to the growth layers was more efficiently absorbed by the quantum wells, while the photoconductive response was stronger for the parallel polarized light. The difference is attributed to the different vertical transport behavior of light and heavy holes and the mixed nature of hole subbands.

Original language	English
Pages (from-to)	1998-2000
Number of pages	3
Journal	Journal of Applied Physics
Volume	76
Issue number	3
DOIs	https://doi.org/10.1063/1.357667
State	Published - 1994
Externally published	Yes

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title = "Polarization dependence of spectral transmission and photoconductive response of a p-doped multiple quantum well structure",

abstract = "A comparison between the optical transmission and the photoconductive response of p-type quantum well infrared photodetectors is demonstrated. The dependence on polarization was found to be different for these two processes. Light polarized perpendicular to the growth layers was more efficiently absorbed by the quantum wells, while the photoconductive response was stronger for the parallel polarized light. The difference is attributed to the different vertical transport behavior of light and heavy holes and the mixed nature of hole subbands.",

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N2 - A comparison between the optical transmission and the photoconductive response of p-type quantum well infrared photodetectors is demonstrated. The dependence on polarization was found to be different for these two processes. Light polarized perpendicular to the growth layers was more efficiently absorbed by the quantum wells, while the photoconductive response was stronger for the parallel polarized light. The difference is attributed to the different vertical transport behavior of light and heavy holes and the mixed nature of hole subbands.

AB - A comparison between the optical transmission and the photoconductive response of p-type quantum well infrared photodetectors is demonstrated. The dependence on polarization was found to be different for these two processes. Light polarized perpendicular to the growth layers was more efficiently absorbed by the quantum wells, while the photoconductive response was stronger for the parallel polarized light. The difference is attributed to the different vertical transport behavior of light and heavy holes and the mixed nature of hole subbands.

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Polarization dependence of spectral transmission and photoconductive response of a p-doped multiple quantum well structure

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