TY - JOUR
T1 - Photoconductivity of Ge/Si quantum dot photodetectors
AU - Rappaport, N.
AU - Finkman, E.
AU - Boucaud, P.
AU - Sauvage, S.
AU - Brunhes, T.
AU - Le Thanh, V.
AU - Bouchier, D.
AU - Schacham, S. E.
PY - 2003
Y1 - 2003
N2 - Various structures of self-assembled Ge/Si quantum dot infrared photodetectors were implemented and investigated. The electronic structure of the QDIPs was studied by electrical and optical techniques including I-V characteristics, dark current, photoconductivity, photoluminescence, and photo-induced infrared absorption. The photoconductive spectra consist of a broad multi-peak, composed of peaks ranging from 70 to 220 meV. Their relative intensity changes with bias. Comparative dark current measurements were performed. Dark current limits the performance of this first generation of Ge/ Si QDIPs. It is plausible that direct doping in the dot layer is a viable way of reducing the dark current.
AB - Various structures of self-assembled Ge/Si quantum dot infrared photodetectors were implemented and investigated. The electronic structure of the QDIPs was studied by electrical and optical techniques including I-V characteristics, dark current, photoconductivity, photoluminescence, and photo-induced infrared absorption. The photoconductive spectra consist of a broad multi-peak, composed of peaks ranging from 70 to 220 meV. Their relative intensity changes with bias. Comparative dark current measurements were performed. Dark current limits the performance of this first generation of Ge/ Si QDIPs. It is plausible that direct doping in the dot layer is a viable way of reducing the dark current.
UR - http://www.scopus.com/inward/record.url?scp=0141973675&partnerID=8YFLogxK
U2 - 10.1016/S1350-4495(03)00173-7
DO - 10.1016/S1350-4495(03)00173-7
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AN - SCOPUS:0141973675
SN - 1350-4495
VL - 44
SP - 513
EP - 516
JO - Infrared Physics and Technology
JF - Infrared Physics and Technology
IS - 5-6
ER -