TY - JOUR
T1 - Photoconductive spectral analysis of InAs quantum dot under normal incidence
AU - Schacham, S. E.
AU - Bahir, G.
AU - Finkman, E.
AU - Julien, F. H.
AU - Fossard, F.
AU - Brault, J.
AU - Gendry, M.
PY - 2003
Y1 - 2003
N2 - InAs/InAlAs-on-InP quantum dots were implemented for infrared photodetection. The photoconductive spectra were measured as a function of polarization angle and bias. Normal incidence configuration was employed, to emphasize the contrast to the response in quantum well infrared photodetectors (QWIPs). Several peaks were observed, ranging from 90 to 420 meV. The strongest peak, at around 95 meV, is highly polarized. The superlinear increase of the intensity with bias, due to bound-to-bound transition followed by tunneling, was modeled successfully by WKB approximation. I-V characteristics show no improvement over QWIP performance.
AB - InAs/InAlAs-on-InP quantum dots were implemented for infrared photodetection. The photoconductive spectra were measured as a function of polarization angle and bias. Normal incidence configuration was employed, to emphasize the contrast to the response in quantum well infrared photodetectors (QWIPs). Several peaks were observed, ranging from 90 to 420 meV. The strongest peak, at around 95 meV, is highly polarized. The superlinear increase of the intensity with bias, due to bound-to-bound transition followed by tunneling, was modeled successfully by WKB approximation. I-V characteristics show no improvement over QWIP performance.
UR - http://www.scopus.com/inward/record.url?scp=0141904574&partnerID=8YFLogxK
U2 - 10.1016/S1350-4495(03)00166-X
DO - 10.1016/S1350-4495(03)00166-X
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AN - SCOPUS:0141904574
SN - 1350-4495
VL - 44
SP - 509
EP - 512
JO - Infrared Physics and Technology
JF - Infrared Physics and Technology
IS - 5-6
ER -