TY - GEN
T1 - p-channel MIS double-metal process InSb monolithic unit cell for infrared imaging
AU - Kepten, Avishai
AU - Shacham-Diamand, Yosef Y.
AU - Schacham, S. E.
PY - 1992
Y1 - 1992
N2 - A new approach to the fabrication of monolithic infrared focal plane arrays is presented and examined in this paper. The array is based on photovoltaic diodes, parallel integration capacitors, and MIS field effect transistors (FET). The photodiode is connected directly to the integrating capacitor while the MISFET serves as a pass gate to the video line. This configuration is operated in the pseudo-staring mode. The array was implemented in InSb, in a process based on a new passivation in which a photo chemical oxidation of InSb is followed by a conventional photo chemical SiO2 growth. A two-level metallization process was developed serving both for electrical connection and optical coverage. Two configurations were tested for the layout of the two metal layers. In addition, the lower metallization was implemented in Cr, Ti, and Al. The optimal structure is a planar array with Cr as the first metal layer which forms the source and drain contacts.
AB - A new approach to the fabrication of monolithic infrared focal plane arrays is presented and examined in this paper. The array is based on photovoltaic diodes, parallel integration capacitors, and MIS field effect transistors (FET). The photodiode is connected directly to the integrating capacitor while the MISFET serves as a pass gate to the video line. This configuration is operated in the pseudo-staring mode. The array was implemented in InSb, in a process based on a new passivation in which a photo chemical oxidation of InSb is followed by a conventional photo chemical SiO2 growth. A two-level metallization process was developed serving both for electrical connection and optical coverage. Two configurations were tested for the layout of the two metal layers. In addition, the lower metallization was implemented in Cr, Ti, and Al. The optimal structure is a planar array with Cr as the first metal layer which forms the source and drain contacts.
UR - http://www.scopus.com/inward/record.url?scp=0027003032&partnerID=8YFLogxK
M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???
AN - SCOPUS:0027003032
SN - 0819408506
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 305
EP - 316
BT - Proceedings of SPIE - The International Society for Optical Engineering
T2 - Infrared Detectors and Focal Plane Arrays II
Y2 - 23 April 1992 through 24 April 1992
ER -