Optoelectronic chromatic dispersion in germanium PN photodiodes: Wavelength monitoring and FBG interrogation

Egor Liokumovitch; Ziv Glasser; Leeju Singh; Rita Abramov; Shmuel Sternklar

doi:10.1364/OL.435159

Optoelectronic chromatic dispersion in germanium PN photodiodes: Wavelength monitoring and FBG interrogation

Egor Liokumovitch, Ziv Glasser, Leeju Singh, Rita Abramov, Shmuel Sternklar

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Optoelectronic chromatic dispersion (OED) has recently been shown to be a significant source of chromatic dispersion in photodiodes. We characterize the OED in a commercial germanium PN-type photodiode and determine the optimum conditions for maximum OED sensitivity and wavelength monitoring. A peak OED sensitivity of 1 deg/nm is measured in a spectral range of 1550-1558 nm with 4 MHz modulation. We also demonstrate an application of OED in fiber Bragg grating (FBG) interrogation. Quasi-static and vibration strains are monitored, with a spectral and strain sensitivity of 1.25 pm/^√Hz and 1.08 µε/^√Hz, respectively. Photodiode OED can form the basis of inexpensive chip-scale grating-less spectral analysis.

Original language	English
Pages (from-to)	4061-4064
Number of pages	4
Journal	Optics Letters
Volume	46
Issue number	16
DOIs	https://doi.org/10.1364/OL.435159
State	Published - 15 Aug 2021

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abstract = "Optoelectronic chromatic dispersion (OED) has recently been shown to be a significant source of chromatic dispersion in photodiodes. We characterize the OED in a commercial germanium PN-type photodiode and determine the optimum conditions for maximum OED sensitivity and wavelength monitoring. A peak OED sensitivity of 1 deg/nm is measured in a spectral range of 1550-1558 nm with 4 MHz modulation. We also demonstrate an application of OED in fiber Bragg grating (FBG) interrogation. Quasi-static and vibration strains are monitored, with a spectral and strain sensitivity of 1.25 pm/√Hz and 1.08 µε/√Hz, respectively. Photodiode OED can form the basis of inexpensive chip-scale grating-less spectral analysis.",

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AU - Liokumovitch, Egor

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AU - Singh, Leeju

AU - Abramov, Rita

AU - Sternklar, Shmuel

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AB - Optoelectronic chromatic dispersion (OED) has recently been shown to be a significant source of chromatic dispersion in photodiodes. We characterize the OED in a commercial germanium PN-type photodiode and determine the optimum conditions for maximum OED sensitivity and wavelength monitoring. A peak OED sensitivity of 1 deg/nm is measured in a spectral range of 1550-1558 nm with 4 MHz modulation. We also demonstrate an application of OED in fiber Bragg grating (FBG) interrogation. Quasi-static and vibration strains are monitored, with a spectral and strain sensitivity of 1.25 pm/√Hz and 1.08 µε/√Hz, respectively. Photodiode OED can form the basis of inexpensive chip-scale grating-less spectral analysis.

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Optoelectronic chromatic dispersion in germanium PN photodiodes: Wavelength monitoring and FBG interrogation

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