Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation

John S. Suehle; Eric M. Vogel; Peter Roitman; John F. Conley; Allan H. Johnston; Bin Wang; Joseph B. Bernstein; C. E. Weintraub

doi:10.1063/1.1448859

Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation

John S. Suehle
, Eric M. Vogel
, Peter Roitman
, John F. Conley
, Allan H. Johnston
, Bin Wang
, Joseph B. Bernstein
, C. E. Weintraub

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

Constant voltage time-dependent-dielectric-breakdown distributions were obtained for both unirradiated and irradiated 3.0 and 3.2 nm thick SiO ₂ films subjected to ⁶⁰Co gamma irradiation and heavy ions of 823 MeV ¹²⁹Xe (linear energy transfer=59MeV-cm²/mg). The gamma irradiation had no effect on oxide lifetime. The heavy ion irradiation substantially reduced oxide life even though the devices were biased at 0.0 V during irradiation. The reduction of oxide lifetime under constant-voltage stress conditions was a strong function of the heavy ion fluence.

Original language	English
Pages (from-to)	1282-1284
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	7
DOIs	https://doi.org/10.1063/1.1448859
State	Published - 18 Feb 2002
Externally published	Yes

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@article{147da54c1d33421da8725e97994f3724,

title = "Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation",

abstract = "Constant voltage time-dependent-dielectric-breakdown distributions were obtained for both unirradiated and irradiated 3.0 and 3.2 nm thick SiO 2 films subjected to 60Co gamma irradiation and heavy ions of 823 MeV 129Xe (linear energy transfer=59MeV-cm2/mg). The gamma irradiation had no effect on oxide lifetime. The heavy ion irradiation substantially reduced oxide life even though the devices were biased at 0.0 V during irradiation. The reduction of oxide lifetime under constant-voltage stress conditions was a strong function of the heavy ion fluence.",

author = "Suehle, \{John S.\} and Vogel, \{Eric M.\} and Peter Roitman and Conley, \{John F.\} and Johnston, \{Allan H.\} and Bin Wang and Bernstein, \{Joseph B.\} and Weintraub, \{C. E.\}",

year = "2002",

month = feb,

day = "18",

doi = "10.1063/1.1448859",

language = "אנגלית",

volume = "80",

pages = "1282--1284",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation

AU - Suehle, John S.

AU - Vogel, Eric M.

AU - Roitman, Peter

AU - Conley, John F.

AU - Johnston, Allan H.

AU - Wang, Bin

AU - Bernstein, Joseph B.

AU - Weintraub, C. E.

PY - 2002/2/18

Y1 - 2002/2/18

N2 - Constant voltage time-dependent-dielectric-breakdown distributions were obtained for both unirradiated and irradiated 3.0 and 3.2 nm thick SiO 2 films subjected to 60Co gamma irradiation and heavy ions of 823 MeV 129Xe (linear energy transfer=59MeV-cm2/mg). The gamma irradiation had no effect on oxide lifetime. The heavy ion irradiation substantially reduced oxide life even though the devices were biased at 0.0 V during irradiation. The reduction of oxide lifetime under constant-voltage stress conditions was a strong function of the heavy ion fluence.

AB - Constant voltage time-dependent-dielectric-breakdown distributions were obtained for both unirradiated and irradiated 3.0 and 3.2 nm thick SiO 2 films subjected to 60Co gamma irradiation and heavy ions of 823 MeV 129Xe (linear energy transfer=59MeV-cm2/mg). The gamma irradiation had no effect on oxide lifetime. The heavy ion irradiation substantially reduced oxide life even though the devices were biased at 0.0 V during irradiation. The reduction of oxide lifetime under constant-voltage stress conditions was a strong function of the heavy ion fluence.

UR - https://www.scopus.com/pages/publications/79956033243

U2 - 10.1063/1.1448859

DO - 10.1063/1.1448859

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:79956033243

SN - 0003-6951

VL - 80

SP - 1282

EP - 1284

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation

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