Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation

John S. Suehle; Eric M. Vogel; Peter Roitman; John F. Conley; Allan H. Johnston; Bin Wang; Joseph B. Bernstein; C. E. Weintraub

doi:10.1063/1.1448859

Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation

John S. Suehle, Eric M. Vogel, Peter Roitman, John F. Conley, Allan H. Johnston, Bin Wang, Joseph B. Bernstein, C. E. Weintraub

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

Constant voltage time-dependent-dielectric-breakdown distributions were obtained for both unirradiated and irradiated 3.0 and 3.2 nm thick SiO ₂ films subjected to ⁶⁰Co gamma irradiation and heavy ions of 823 MeV ¹²⁹Xe (linear energy transfer=59MeV-cm²/mg). The gamma irradiation had no effect on oxide lifetime. The heavy ion irradiation substantially reduced oxide life even though the devices were biased at 0.0 V during irradiation. The reduction of oxide lifetime under constant-voltage stress conditions was a strong function of the heavy ion fluence.

Original language	English
Pages (from-to)	1282-1284
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	7
DOIs	https://doi.org/10.1063/1.1448859
State	Published - 18 Feb 2002
Externally published	Yes

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title = "Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation",

abstract = "Constant voltage time-dependent-dielectric-breakdown distributions were obtained for both unirradiated and irradiated 3.0 and 3.2 nm thick SiO 2 films subjected to 60Co gamma irradiation and heavy ions of 823 MeV 129Xe (linear energy transfer=59MeV-cm2/mg). The gamma irradiation had no effect on oxide lifetime. The heavy ion irradiation substantially reduced oxide life even though the devices were biased at 0.0 V during irradiation. The reduction of oxide lifetime under constant-voltage stress conditions was a strong function of the heavy ion fluence.",

author = "Suehle, {John S.} and Vogel, {Eric M.} and Peter Roitman and Conley, {John F.} and Johnston, {Allan H.} and Bin Wang and Bernstein, {Joseph B.} and Weintraub, {C. E.}",

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doi = "10.1063/1.1448859",

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AU - Suehle, John S.

AU - Vogel, Eric M.

AU - Roitman, Peter

AU - Conley, John F.

AU - Johnston, Allan H.

AU - Wang, Bin

AU - Bernstein, Joseph B.

AU - Weintraub, C. E.

PY - 2002/2/18

Y1 - 2002/2/18

N2 - Constant voltage time-dependent-dielectric-breakdown distributions were obtained for both unirradiated and irradiated 3.0 and 3.2 nm thick SiO 2 films subjected to 60Co gamma irradiation and heavy ions of 823 MeV 129Xe (linear energy transfer=59MeV-cm2/mg). The gamma irradiation had no effect on oxide lifetime. The heavy ion irradiation substantially reduced oxide life even though the devices were biased at 0.0 V during irradiation. The reduction of oxide lifetime under constant-voltage stress conditions was a strong function of the heavy ion fluence.

AB - Constant voltage time-dependent-dielectric-breakdown distributions were obtained for both unirradiated and irradiated 3.0 and 3.2 nm thick SiO 2 films subjected to 60Co gamma irradiation and heavy ions of 823 MeV 129Xe (linear energy transfer=59MeV-cm2/mg). The gamma irradiation had no effect on oxide lifetime. The heavy ion irradiation substantially reduced oxide life even though the devices were biased at 0.0 V during irradiation. The reduction of oxide lifetime under constant-voltage stress conditions was a strong function of the heavy ion fluence.

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Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation

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