Novel method of low-vacuum plasma triode sputtering

G. Golan; A. Axelevitch

doi:10.1016/S0026-2692(02)00030-7

Novel method of low-vacuum plasma triode sputtering

G. Golan, A. Axelevitch

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

A novel sputtering method based on a triode-sputtering set-up is presented. This low-vacuum plasma method enables sputtering of thin films at a pressure range 0.2-5mTorr, using a supported gas discharge. The new method is capable of an independent control of the sputtering rate vs. sputtering voltage. Temperature distribution of electrons in the plasma was experimentally studied, using the Langmuir probe. Experimental sputtering results of Ti and Si layers, using this method, are described.

Original language	English
Pages (from-to)	651-657
Number of pages	7
Journal	Microelectronics Journal
Volume	33
Issue number	8
DOIs	https://doi.org/10.1016/S0026-2692(02)00030-7
State	Published - Aug 2002
Externally published	Yes

Keywords

Silicon
Tetrode sputtering
Thin film
Titanium

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10.1016/S0026-2692(02)00030-7

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abstract = "A novel sputtering method based on a triode-sputtering set-up is presented. This low-vacuum plasma method enables sputtering of thin films at a pressure range 0.2-5mTorr, using a supported gas discharge. The new method is capable of an independent control of the sputtering rate vs. sputtering voltage. Temperature distribution of electrons in the plasma was experimentally studied, using the Langmuir probe. Experimental sputtering results of Ti and Si layers, using this method, are described.",

keywords = "Silicon, Tetrode sputtering, Thin film, Titanium",

author = "G. Golan and A. Axelevitch",

year = "2002",

month = aug,

doi = "10.1016/S0026-2692(02)00030-7",

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AU - Axelevitch, A.

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AB - A novel sputtering method based on a triode-sputtering set-up is presented. This low-vacuum plasma method enables sputtering of thin films at a pressure range 0.2-5mTorr, using a supported gas discharge. The new method is capable of an independent control of the sputtering rate vs. sputtering voltage. Temperature distribution of electrons in the plasma was experimentally studied, using the Langmuir probe. Experimental sputtering results of Ti and Si layers, using this method, are described.

KW - Silicon

KW - Tetrode sputtering

KW - Thin film

KW - Titanium

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SP - 651

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JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 8

ER -

Novel method of low-vacuum plasma triode sputtering

Abstract

Keywords

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