TY - GEN
T1 - Novel approach to sputtered tantalum film resistors with controlled pre-defined resistance
AU - Golan, G.
AU - Axelevitch, A.
PY - 2002
Y1 - 2002
N2 - A controlled magnetron sputtering method to obtain precision thin-film tantalum resistors with preset resistance values, is presented. These tantalum film resistors consist of layers of pure tantalum atoms and of tantalum oxides. The proposed sputtering method is based on a previous mathematical modeling developed by the authors. With this modeling one can predict the final product performance as a function of its technological deposition parameters. Feasibility tests to obtain tantalum and tantalum oxide film resistors with a controlled range of resistances, were done on a dedicated sputtering set-up. As a reactive agent in the experimental tests, only residual gases were used. Using the proposed model, precision film resistors with repeatable properties, were achieved in direct relations to the sputtering process parameters. It was found that only two major independent parameters are influencing the resistivity of the tantalum films: a. The argon pressure in the vacuum chamber, b. The sputtering high voltage given to the target. A threshold level of tantalum phase transition from metal to dielectric, was found. Around this threshold level all types of pre-defined resistance may be achieved. The resistance stability of the obtained films, following an annealing Vacuum Photothermal Processing (VPP) was studied as well. It was shown that the electrical properties of the obtained resistors following a VPP treatment were improved with a better resistance stability.
AB - A controlled magnetron sputtering method to obtain precision thin-film tantalum resistors with preset resistance values, is presented. These tantalum film resistors consist of layers of pure tantalum atoms and of tantalum oxides. The proposed sputtering method is based on a previous mathematical modeling developed by the authors. With this modeling one can predict the final product performance as a function of its technological deposition parameters. Feasibility tests to obtain tantalum and tantalum oxide film resistors with a controlled range of resistances, were done on a dedicated sputtering set-up. As a reactive agent in the experimental tests, only residual gases were used. Using the proposed model, precision film resistors with repeatable properties, were achieved in direct relations to the sputtering process parameters. It was found that only two major independent parameters are influencing the resistivity of the tantalum films: a. The argon pressure in the vacuum chamber, b. The sputtering high voltage given to the target. A threshold level of tantalum phase transition from metal to dielectric, was found. Around this threshold level all types of pre-defined resistance may be achieved. The resistance stability of the obtained films, following an annealing Vacuum Photothermal Processing (VPP) was studied as well. It was shown that the electrical properties of the obtained resistors following a VPP treatment were improved with a better resistance stability.
UR - http://www.scopus.com/inward/record.url?scp=84906701586&partnerID=8YFLogxK
U2 - 10.1109/MIEL.2002.1003207
DO - 10.1109/MIEL.2002.1003207
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AN - SCOPUS:84906701586
SN - 0780372352
SN - 9780780372351
T3 - 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
SP - 345
EP - 347
BT - 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
PB - IEEE Computer Society
T2 - 2002 23rd International Conference on Microelectronics, MIEL 2002
Y2 - 12 May 2002 through 15 May 2002
ER -