Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors

A. Pesach; E. Gross; C. Y. Huang; Y. D. Lin; A. Vardi; S. E. Schacham; S. Nakamura; G. Bahir

doi:10.1063/1.4813395

Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors

A. Pesach, E. Gross, C. Y. Huang, Y. D. Lin, A. Vardi, S. E. Schacham, S. Nakamura, G. Bahir

Department of Electrical and Electronics Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown by metal organic chemical vapor deposition and exhibit TM-polarized photocurrent at peak wavelengths of 7.5 and 9.3 μm at temperature of 14 K. Based on the experimental data of intersubband and interband transition energies and 8-band k·p Schrödinger-Poisson solver calculations, we were able to estimate the conduction band offset to valence band offset discontinuity ratio (ΔE_c:ΔE _v) of 57:43 for In_0.1Ga_0.9N/GaN and 55:45, for In_0.095GA_0.905N/Al_0.07Ga_0.93N non-polar m-plane multi-quantum well structures.

Original language	English
Article number	022110
Journal	Applied Physics Letters
Volume	103
Issue number	2
DOIs	https://doi.org/10.1063/1.4813395
State	Published - 8 Jul 2013

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title = "Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors",

abstract = "We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown by metal organic chemical vapor deposition and exhibit TM-polarized photocurrent at peak wavelengths of 7.5 and 9.3 μm at temperature of 14 K. Based on the experimental data of intersubband and interband transition energies and 8-band k·p Schr{\"o}dinger-Poisson solver calculations, we were able to estimate the conduction band offset to valence band offset discontinuity ratio (ΔEc:ΔE v) of 57:43 for In0.1Ga0.9N/GaN and 55:45, for In0.095GA0.905N/Al0.07Ga0.93N non-polar m-plane multi-quantum well structures.",

author = "A. Pesach and E. Gross and Huang, {C. Y.} and Lin, {Y. D.} and A. Vardi and Schacham, {S. E.} and S. Nakamura and G. Bahir",

note = "Funding Information: The authors acknowledge partial financial support by the EC FET OPEN “Unitride” Grant No. 233950. The authors would like to thank Dr. S. Sakr, Dr. F. J. Julien, and Dr. E. Monroy for their help throughout this work. The MQW structures were grown at “University of California, Santa Barbara.” ",

year = "2013",

month = jul,

day = "8",

doi = "10.1063/1.4813395",

language = "אנגלית",

volume = "103",

journal = "Applied Physics Letters",

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T1 - Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors

AU - Pesach, A.

AU - Gross, E.

AU - Huang, C. Y.

AU - Lin, Y. D.

AU - Vardi, A.

AU - Schacham, S. E.

AU - Nakamura, S.

AU - Bahir, G.

N1 - Funding Information: The authors acknowledge partial financial support by the EC FET OPEN “Unitride” Grant No. 233950. The authors would like to thank Dr. S. Sakr, Dr. F. J. Julien, and Dr. E. Monroy for their help throughout this work. The MQW structures were grown at “University of California, Santa Barbara.”

PY - 2013/7/8

Y1 - 2013/7/8

N2 - We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown by metal organic chemical vapor deposition and exhibit TM-polarized photocurrent at peak wavelengths of 7.5 and 9.3 μm at temperature of 14 K. Based on the experimental data of intersubband and interband transition energies and 8-band k·p Schrödinger-Poisson solver calculations, we were able to estimate the conduction band offset to valence band offset discontinuity ratio (ΔEc:ΔE v) of 57:43 for In0.1Ga0.9N/GaN and 55:45, for In0.095GA0.905N/Al0.07Ga0.93N non-polar m-plane multi-quantum well structures.

AB - We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown by metal organic chemical vapor deposition and exhibit TM-polarized photocurrent at peak wavelengths of 7.5 and 9.3 μm at temperature of 14 K. Based on the experimental data of intersubband and interband transition energies and 8-band k·p Schrödinger-Poisson solver calculations, we were able to estimate the conduction band offset to valence band offset discontinuity ratio (ΔEc:ΔE v) of 57:43 for In0.1Ga0.9N/GaN and 55:45, for In0.095GA0.905N/Al0.07Ga0.93N non-polar m-plane multi-quantum well structures.

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JO - Applied Physics Letters

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ER -

Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors

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