Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms

Qin Jin; Joseph B. Bernstein

doi:10.1109/IRWS.2006.305219

Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms

Qin Jin, Joseph B. Bernstein

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Scopus citations

Abstract

In this paper, we study temperature and voltage acceleration of semiconductor device with multiple intrinsic failure mechanisms involved: hot carrier injection (HCI), time dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). Simulation shows that system activation energy and voltage acceleration parameter depend on stress temperature and voltage. A modified Arrhenius relationship is proposed to model the temperature dependence of device lifetime at given voltage. A modified exponential model is also proposed to model the voltage dependence of device lifetime at given temperature.

Original language	English
Title of host publication	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	93-97
Number of pages	5
ISBN (Print)	1424402964, 9781424402960
DOIs	https://doi.org/10.1109/IRWS.2006.305219
State	Published - 2006
Externally published	Yes
Event	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW - South Lake Tahoe, CA, United States Duration: 16 Oct 2006 → 19 Oct 2006

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report
ISSN (Print)	1930-8841
ISSN (Electronic)	2374-8036

Conference

Conference	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW
Country/Territory	United States
City	South Lake Tahoe, CA
Period	16/10/06 → 19/10/06

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10.1109/IRWS.2006.305219

Cite this

Jin, Q., & Bernstein, J. B. (2006). Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms. In 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW (pp. 93-97). Article 4098696 (IEEE International Integrated Reliability Workshop Final Report). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRWS.2006.305219

Jin, Qin ; Bernstein, Joseph B. / Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms. 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW. Institute of Electrical and Electronics Engineers Inc., 2006. pp. 93-97 (IEEE International Integrated Reliability Workshop Final Report).

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title = "Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms",

abstract = "In this paper, we study temperature and voltage acceleration of semiconductor device with multiple intrinsic failure mechanisms involved: hot carrier injection (HCI), time dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). Simulation shows that system activation energy and voltage acceleration parameter depend on stress temperature and voltage. A modified Arrhenius relationship is proposed to model the temperature dependence of device lifetime at given voltage. A modified exponential model is also proposed to model the voltage dependence of device lifetime at given temperature.",

author = "Qin Jin and Bernstein, {Joseph B.}",

year = "2006",

doi = "10.1109/IRWS.2006.305219",

language = "אנגלית",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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note = "2006 IEEE International Integrated Reliability Workshop Final Report, IIRW ; Conference date: 16-10-2006 Through 19-10-2006",

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Jin, Q & Bernstein, JB 2006, Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms. in 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW., 4098696, IEEE International Integrated Reliability Workshop Final Report, Institute of Electrical and Electronics Engineers Inc., pp. 93-97, 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW, South Lake Tahoe, CA, United States, 16/10/06. https://doi.org/10.1109/IRWS.2006.305219

Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms. / Jin, Qin; Bernstein, Joseph B.
2006 IEEE International Integrated Reliability Workshop Final Report, IIRW. Institute of Electrical and Electronics Engineers Inc., 2006. p. 93-97 4098696 (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - In this paper, we study temperature and voltage acceleration of semiconductor device with multiple intrinsic failure mechanisms involved: hot carrier injection (HCI), time dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). Simulation shows that system activation energy and voltage acceleration parameter depend on stress temperature and voltage. A modified Arrhenius relationship is proposed to model the temperature dependence of device lifetime at given voltage. A modified exponential model is also proposed to model the voltage dependence of device lifetime at given temperature.

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Jin Q, Bernstein JB. Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms. In 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW. Institute of Electrical and Electronics Engineers Inc. 2006. p. 93-97. 4098696. (IEEE International Integrated Reliability Workshop Final Report). doi: 10.1109/IRWS.2006.305219

Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms

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