New insights into threshold voltage shifts for ultrathin gate oxides

Dawei Heb; Eric M. Vogel; Joseph B. Bernstein

New insights into threshold voltage shifts for ultrathin gate oxides

Dawei Heb, Eric M. Vogel, Joseph B. Bernstein

Research output: Contribution to journal › Conference article › peer-review

Abstract

Threshold voltage (V_th) shifts of p- and n-channel MOSFETs during a stress are analyzed from both experiment and simulation. The result of the analysis showed that V_th shift is mainly induced by the carrier channel mobility degradation. This result can explain the polarity dependence of V_th shifts in p- and n-channel MOSFETs. Besides, it suggested that the commonly accepted idea that V_th shifts are due to Coulombic charge generation in the oxide affecting the surface potential is not accurate. It also suggested that proposed oxide degradation mechanisms based on V _th shifts measured using I_d-V_g may not be accurate.

Original language	English
Pages (from-to)	99-101
Number of pages	3
Journal	IEEE International Integrated Reliability Workshop Final Report
State	Published - 2004
Externally published	Yes
Event	2004 IEEE International Integrated Reliability Workshop Final Report - S. Lake Tahoe, CA, United States Duration: 18 Oct 2004 → 21 Oct 2004

Keywords

Flat band voltage shift
Interface trap
Mobility degradation
Polarity dependence
Simulation
Threshold voltage shift

Cite this

@article{7ed33e51691c4a67b592b3a08840ba13,

title = "New insights into threshold voltage shifts for ultrathin gate oxides",

abstract = "Threshold voltage (Vth) shifts of p- and n-channel MOSFETs during a stress are analyzed from both experiment and simulation. The result of the analysis showed that Vth shift is mainly induced by the carrier channel mobility degradation. This result can explain the polarity dependence of Vth shifts in p- and n-channel MOSFETs. Besides, it suggested that the commonly accepted idea that Vth shifts are due to Coulombic charge generation in the oxide affecting the surface potential is not accurate. It also suggested that proposed oxide degradation mechanisms based on V th shifts measured using Id-Vg may not be accurate.",

keywords = "Flat band voltage shift, Interface trap, Mobility degradation, Polarity dependence, Simulation, Threshold voltage shift",

author = "Dawei Heb and Vogel, \{Eric M.\} and Bernstein, \{Joseph B.\}",

year = "2004",

language = "אנגלית",

pages = "99--101",

journal = "IEEE International Integrated Reliability Workshop Final Report",

issn = "1930-8841",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 IEEE International Integrated Reliability Workshop Final Report ; Conference date: 18-10-2004 Through 21-10-2004",

}

TY - JOUR

T1 - New insights into threshold voltage shifts for ultrathin gate oxides

AU - Heb, Dawei

AU - Vogel, Eric M.

AU - Bernstein, Joseph B.

PY - 2004

Y1 - 2004

N2 - Threshold voltage (Vth) shifts of p- and n-channel MOSFETs during a stress are analyzed from both experiment and simulation. The result of the analysis showed that Vth shift is mainly induced by the carrier channel mobility degradation. This result can explain the polarity dependence of Vth shifts in p- and n-channel MOSFETs. Besides, it suggested that the commonly accepted idea that Vth shifts are due to Coulombic charge generation in the oxide affecting the surface potential is not accurate. It also suggested that proposed oxide degradation mechanisms based on V th shifts measured using Id-Vg may not be accurate.

AB - Threshold voltage (Vth) shifts of p- and n-channel MOSFETs during a stress are analyzed from both experiment and simulation. The result of the analysis showed that Vth shift is mainly induced by the carrier channel mobility degradation. This result can explain the polarity dependence of Vth shifts in p- and n-channel MOSFETs. Besides, it suggested that the commonly accepted idea that Vth shifts are due to Coulombic charge generation in the oxide affecting the surface potential is not accurate. It also suggested that proposed oxide degradation mechanisms based on V th shifts measured using Id-Vg may not be accurate.

KW - Flat band voltage shift

KW - Interface trap

KW - Mobility degradation

KW - Polarity dependence

KW - Simulation

KW - Threshold voltage shift

UR - https://www.scopus.com/pages/publications/21644457169

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:21644457169

SN - 1930-8841

SP - 99

EP - 101

JO - IEEE International Integrated Reliability Workshop Final Report

JF - IEEE International Integrated Reliability Workshop Final Report

T2 - 2004 IEEE International Integrated Reliability Workshop Final Report

Y2 - 18 October 2004 through 21 October 2004

ER -

New insights into threshold voltage shifts for ultrathin gate oxides

Abstract

Keywords

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