New insights into threshold voltage shifts for ultrathin gate oxides

Dawei Heb; Eric M. Vogel; Joseph B. Bernstein

New insights into threshold voltage shifts for ultrathin gate oxides

Dawei Heb, Eric M. Vogel, Joseph B. Bernstein

Research output: Contribution to conference › Paper › peer-review

Abstract

Threshold voltage (V _th) shifts of p- and n-channel MOSFETs during a stress are analyzed from both experiment and simulation. The result of the analysis showed that V _th shift is mainly induced by the carrier channel mobility degradation. This result can explain the polarity dependence of V _th shifts in p- and n-channel MOSFETs. Besides, it suggested that the commonly accepted idea that V _th shifts are due to Coulombic charge generation in the oxide affecting the surface potential is not accurate. It also suggested that proposed oxide degradation mechanisms based on V _th shifts measured using I _d-V _g may not be accurate.

Original language	English
Pages	99-101
Number of pages	3
State	Published - 2004
Externally published	Yes
Event	2004 IEEE International Integrated Reliability Workshop Final Report - S. Lake Tahoe, CA, United States Duration: 18 Oct 2004 → 21 Oct 2004

Conference

Conference	2004 IEEE International Integrated Reliability Workshop Final Report
Country/Territory	United States
City	S. Lake Tahoe, CA
Period	18/10/04 → 21/10/04

Keywords

Flat band voltage shift
Interface trap
Mobility degradation
Polarity dependence
Simulation
Threshold voltage shift

Cite this

@conference{3361821b5e01453cb6da45719c68e019,

title = "New insights into threshold voltage shifts for ultrathin gate oxides",

abstract = "Threshold voltage (V th) shifts of p- and n-channel MOSFETs during a stress are analyzed from both experiment and simulation. The result of the analysis showed that V th shift is mainly induced by the carrier channel mobility degradation. This result can explain the polarity dependence of V th shifts in p- and n-channel MOSFETs. Besides, it suggested that the commonly accepted idea that V th shifts are due to Coulombic charge generation in the oxide affecting the surface potential is not accurate. It also suggested that proposed oxide degradation mechanisms based on V th shifts measured using I d-V g may not be accurate.",

keywords = "Flat band voltage shift, Interface trap, Mobility degradation, Polarity dependence, Simulation, Threshold voltage shift",

author = "Dawei Heb and Vogel, {Eric M.} and Bernstein, {Joseph B.}",

year = "2004",

language = "אנגלית",

pages = "99--101",

note = "2004 IEEE International Integrated Reliability Workshop Final Report ; Conference date: 18-10-2004 Through 21-10-2004",

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TY - CONF

T1 - New insights into threshold voltage shifts for ultrathin gate oxides

AU - Heb, Dawei

AU - Vogel, Eric M.

AU - Bernstein, Joseph B.

PY - 2004

Y1 - 2004

N2 - Threshold voltage (V th) shifts of p- and n-channel MOSFETs during a stress are analyzed from both experiment and simulation. The result of the analysis showed that V th shift is mainly induced by the carrier channel mobility degradation. This result can explain the polarity dependence of V th shifts in p- and n-channel MOSFETs. Besides, it suggested that the commonly accepted idea that V th shifts are due to Coulombic charge generation in the oxide affecting the surface potential is not accurate. It also suggested that proposed oxide degradation mechanisms based on V th shifts measured using I d-V g may not be accurate.

AB - Threshold voltage (V th) shifts of p- and n-channel MOSFETs during a stress are analyzed from both experiment and simulation. The result of the analysis showed that V th shift is mainly induced by the carrier channel mobility degradation. This result can explain the polarity dependence of V th shifts in p- and n-channel MOSFETs. Besides, it suggested that the commonly accepted idea that V th shifts are due to Coulombic charge generation in the oxide affecting the surface potential is not accurate. It also suggested that proposed oxide degradation mechanisms based on V th shifts measured using I d-V g may not be accurate.

KW - Flat band voltage shift

KW - Interface trap

KW - Mobility degradation

KW - Polarity dependence

KW - Simulation

KW - Threshold voltage shift

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SP - 99

EP - 101

T2 - 2004 IEEE International Integrated Reliability Workshop Final Report

Y2 - 18 October 2004 through 21 October 2004

ER -

New insights into threshold voltage shifts for ultrathin gate oxides

Abstract

Conference

Keywords

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