Near infrared quantum cascade detector in GaNAlGaNAlN heterostructures

A. Vardi; G. Bahir; F. Guillot; C. Bougerol; E. Monroy; S. E. Schacham; M. Tchernycheva; F. H. Julien

doi:10.1063/1.2830704

Near infrared quantum cascade detector in GaNAlGaNAlN heterostructures

A. Vardi
, G. Bahir
, F. Guillot
, C. Bougerol
, E. Monroy
, S. E. Schacham
, M. Tchernycheva
, F. H. Julien

Department of Electrical and Electronics Engineering

Research output: Contribution to journal › Article › peer-review

152 Scopus citations

Abstract

A quantum cascade detector in the GaN/AlGaN/AlN material system was implemented. The design takes advantage of the large internal field existing in the nitrides in order to generate the essential saw tooth energy level structure. The device operates in the near IR spectral range with a room temperature responsivity at λ=1.7 μm of 10 mAW (1000 VW) at zero bias. The spectroscopic measurements are in good agreement with simulations.

Original language	English
Article number	011112
Journal	Applied Physics Letters
Volume	92
Issue number	1
DOIs	https://doi.org/10.1063/1.2830704
State	Published - 2008

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10.1063/1.2830704

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title = "Near infrared quantum cascade detector in GaNAlGaNAlN heterostructures",

abstract = "A quantum cascade detector in the GaN/AlGaN/AlN material system was implemented. The design takes advantage of the large internal field existing in the nitrides in order to generate the essential saw tooth energy level structure. The device operates in the near IR spectral range with a room temperature responsivity at λ=1.7 μm of 10 mAW (1000 VW) at zero bias. The spectroscopic measurements are in good agreement with simulations.",

author = "A. Vardi and G. Bahir and F. Guillot and C. Bougerol and E. Monroy and Schacham, \{S. E.\} and M. Tchernycheva and Julien, \{F. H.\}",

note = "Funding Information: This work was supported in part by the U.S.-Israel Bi-national Science Foundation under Contract No. 2004366. The AlN-on-saphire templates used as a substrate were provided by Dowa Electronics Materials, Co., Ltd. The authors would like to acknowledge the assistance of Ms. Nasrin Essner in the analysis.",

year = "2008",

doi = "10.1063/1.2830704",

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T1 - Near infrared quantum cascade detector in GaNAlGaNAlN heterostructures

AU - Vardi, A.

AU - Bahir, G.

AU - Guillot, F.

AU - Bougerol, C.

AU - Monroy, E.

AU - Schacham, S. E.

AU - Tchernycheva, M.

AU - Julien, F. H.

N1 - Funding Information: This work was supported in part by the U.S.-Israel Bi-national Science Foundation under Contract No. 2004366. The AlN-on-saphire templates used as a substrate were provided by Dowa Electronics Materials, Co., Ltd. The authors would like to acknowledge the assistance of Ms. Nasrin Essner in the analysis.

PY - 2008

Y1 - 2008

N2 - A quantum cascade detector in the GaN/AlGaN/AlN material system was implemented. The design takes advantage of the large internal field existing in the nitrides in order to generate the essential saw tooth energy level structure. The device operates in the near IR spectral range with a room temperature responsivity at λ=1.7 μm of 10 mAW (1000 VW) at zero bias. The spectroscopic measurements are in good agreement with simulations.

AB - A quantum cascade detector in the GaN/AlGaN/AlN material system was implemented. The design takes advantage of the large internal field existing in the nitrides in order to generate the essential saw tooth energy level structure. The device operates in the near IR spectral range with a room temperature responsivity at λ=1.7 μm of 10 mAW (1000 VW) at zero bias. The spectroscopic measurements are in good agreement with simulations.

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Near infrared quantum cascade detector in GaNAlGaNAlN heterostructures

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