MW-scale ICRF plasma heating using IGBT switches in a multi-pulse scheme

I. Be'ery, K. Kogan, O. Seemann

Research output: Contribution to journalArticlepeer-review

Abstract

Solid-state silicon switches are cheap and reliable option for 1-10 MHz RF power sources, required for plasma ion cyclotron RF heating (ICRF). The large `on' resistance of MOSFET and similar devices limits their power delivery to a few tens of kW per switch. Low resistivity devices, such as IGBT, suffer from large `off' switching time, which limits their useful frequency range and increases the power dissipated in the switch. Here we demonstrate more than 0.8 MW circulated RF power at 2 MHz using only three high voltage IGBT switches. The circuit uses the fast `on' switching capability of the IGBTs to generate high-Q pulse train. This operation mode also simplifies the measurement of RF coupling between the antenna and the plasma.
Original languageEnglish
Article numberT06003
JournalJournal of Instrumentation
Volume10
Issue number6
DOIs
StatePublished - 1 Jun 2015

Keywords

  • Plasma generation (laser-produced
  • RF
  • x ray-produced)
  • Pulsed power

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