Modified magnetic controlled plasma sputtering method

G. Golan; A. Axelevitch; E. Rabinovich

doi:10.1016/0042-207X(96)00138-8

Modified magnetic controlled plasma sputtering method

G. Golan
, A. Axelevitch
, E. Rabinovich

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A modified method to improve thin film vacuum sputtering is presented. This method is capable of controlling the sputtering plasma via an external set of magnets, in a similar fashion to the tetrode sputtering method. The main advantage of Magnetic Controlled Plasma Sputtering (MCPS) is its ability to independently control all deposition parameters without any interference or cross-talk. Deposition rate, using the MCPS, is found to be almost twice the rate of triode and tetrode sputtering techniques. Experimental results using the MCPS to deposit Ni layers are described.

Original language	English
Pages (from-to)	1081-1083
Number of pages	3
Journal	Vacuum
Volume	47
Issue number	9
DOIs	https://doi.org/10.1016/0042-207X(96)00138-8
State	Published - Sep 1996
Externally published	Yes

Access to Document

10.1016/0042-207X(96)00138-8

Cite this

@article{8b9abd4f4a7b4ab98b9d553b3c8e29ed,

title = "Modified magnetic controlled plasma sputtering method",

abstract = "A modified method to improve thin film vacuum sputtering is presented. This method is capable of controlling the sputtering plasma via an external set of magnets, in a similar fashion to the tetrode sputtering method. The main advantage of Magnetic Controlled Plasma Sputtering (MCPS) is its ability to independently control all deposition parameters without any interference or cross-talk. Deposition rate, using the MCPS, is found to be almost twice the rate of triode and tetrode sputtering techniques. Experimental results using the MCPS to deposit Ni layers are described.",

author = "G. Golan and A. Axelevitch and E. Rabinovich",

year = "1996",

month = sep,

doi = "10.1016/0042-207X(96)00138-8",

language = "אנגלית",

volume = "47",

pages = "1081--1083",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd.",

number = "9",

}

TY - JOUR

T1 - Modified magnetic controlled plasma sputtering method

AU - Golan, G.

AU - Axelevitch, A.

AU - Rabinovich, E.

PY - 1996/9

Y1 - 1996/9

N2 - A modified method to improve thin film vacuum sputtering is presented. This method is capable of controlling the sputtering plasma via an external set of magnets, in a similar fashion to the tetrode sputtering method. The main advantage of Magnetic Controlled Plasma Sputtering (MCPS) is its ability to independently control all deposition parameters without any interference or cross-talk. Deposition rate, using the MCPS, is found to be almost twice the rate of triode and tetrode sputtering techniques. Experimental results using the MCPS to deposit Ni layers are described.

AB - A modified method to improve thin film vacuum sputtering is presented. This method is capable of controlling the sputtering plasma via an external set of magnets, in a similar fashion to the tetrode sputtering method. The main advantage of Magnetic Controlled Plasma Sputtering (MCPS) is its ability to independently control all deposition parameters without any interference or cross-talk. Deposition rate, using the MCPS, is found to be almost twice the rate of triode and tetrode sputtering techniques. Experimental results using the MCPS to deposit Ni layers are described.

UR - https://www.scopus.com/pages/publications/0030241142

U2 - 10.1016/0042-207X(96)00138-8

DO - 10.1016/0042-207X(96)00138-8

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0030241142

SN - 0042-207X

VL - 47

SP - 1081

EP - 1083

JO - Vacuum

JF - Vacuum

IS - 9

ER -

Modified magnetic controlled plasma sputtering method

Abstract

Access to Document

Other files and links

Fingerprint

Cite this