Modified magnetic controlled plasma sputtering method

G. Golan; A. Axelevitch; E. Rabinovich

doi:10.1016/0042-207X(96)00138-8

Modified magnetic controlled plasma sputtering method

G. Golan, A. Axelevitch, E. Rabinovich

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A modified method to improve thin film vacuum sputtering is presented. This method is capable of controlling the sputtering plasma via an external set of magnets, in a similar fashion to the tetrode sputtering method. The main advantage of Magnetic Controlled Plasma Sputtering (MCPS) is its ability to independently control all deposition parameters without any interference or cross-talk. Deposition rate, using the MCPS, is found to be almost twice the rate of triode and tetrode sputtering techniques. Experimental results using the MCPS to deposit Ni layers are described.

Original language	English
Pages (from-to)	1081-1083
Number of pages	3
Journal	Vacuum
Volume	47
Issue number	9
DOIs	https://doi.org/10.1016/0042-207X(96)00138-8
State	Published - Sep 1996
Externally published	Yes

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title = "Modified magnetic controlled plasma sputtering method",

abstract = "A modified method to improve thin film vacuum sputtering is presented. This method is capable of controlling the sputtering plasma via an external set of magnets, in a similar fashion to the tetrode sputtering method. The main advantage of Magnetic Controlled Plasma Sputtering (MCPS) is its ability to independently control all deposition parameters without any interference or cross-talk. Deposition rate, using the MCPS, is found to be almost twice the rate of triode and tetrode sputtering techniques. Experimental results using the MCPS to deposit Ni layers are described.",

author = "G. Golan and A. Axelevitch and E. Rabinovich",

year = "1996",

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AB - A modified method to improve thin film vacuum sputtering is presented. This method is capable of controlling the sputtering plasma via an external set of magnets, in a similar fashion to the tetrode sputtering method. The main advantage of Magnetic Controlled Plasma Sputtering (MCPS) is its ability to independently control all deposition parameters without any interference or cross-talk. Deposition rate, using the MCPS, is found to be almost twice the rate of triode and tetrode sputtering techniques. Experimental results using the MCPS to deposit Ni layers are described.

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Modified magnetic controlled plasma sputtering method

Abstract

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