Metal-insulator phase transition in vanadium oxides films

G. Golan, A. Axelevitch, B. Sigalov, B. Gorenstein

Research output: Contribution to journalArticlepeer-review

45 Scopus citations


Vanadium oxide films (VO2) are of a typical phase transition ranging between metal phase to a semi-conducting phase. The theoretical metamorphose temperature of VO2 is around 340K (67°C). This transition temperature is mostly governed by the deposition method in which the film was made, and the film's composition. Optical and electrical properties of VO2 films are dramatically changed during this phase transition, thus making it useful in many microelectronics and optoelectronics applications. In this work we evaluate several deposition methods of VO2 and their relations to the electro-optics properties of such films. The examined VO2 films consisted of various phases of the material. Best films to demonstrate a metal-insulator transition were made in vacuum evaporation of V powder in a tungsten boat, treated in argon-oxygen flow (10:1), at 400°C. The temperature range of phase transitions was found at 16-80°C. Resistivity changes and colors of the films were studied as well.

Original languageEnglish
Pages (from-to)255-258
Number of pages4
JournalMicroelectronics Journal
Issue number4
StatePublished - Apr 2003
Externally publishedYes


  • Metal-insulator phase transition
  • Thin color films
  • Vanadium oxide


Dive into the research topics of 'Metal-insulator phase transition in vanadium oxides films'. Together they form a unique fingerprint.

Cite this