Mechanism of dynamic NBTI of pMOSFETs

B. Zhu; J. S. Suehle; J. B. Bernstein; Y. Chen

Mechanism of dynamic NBTI of pMOSFETs

B. Zhu, J. S. Suehle, J. B. Bernstein, Y. Chen

Research output: Contribution to conference › Paper › peer-review

8 Scopus citations

Abstract

Negative bias temperature instability of pMOSFETs is studied. It is found that there is strong frequency dependence of the parameters shift. At a certain high frequency, the threshold voltage shift is only about half of that generated by dc stress. The possible sources of this dependence are explored. An empirical model is established based on the reduction of Fixed oxide charges. This model is further used to explain some observed phenomena.

Original language	English
Pages	113-117
Number of pages	5
State	Published - 2004
Externally published	Yes
Event	2004 IEEE International Integrated Reliability Workshop Final Report - S. Lake Tahoe, CA, United States Duration: 18 Oct 2004 → 21 Oct 2004

Conference

Conference	2004 IEEE International Integrated Reliability Workshop Final Report
Country/Territory	United States
City	S. Lake Tahoe, CA
Period	18/10/04 → 21/10/04

Keywords

Interface traps
Negative bias temperature instability
Threshold voltage
pMOSFETs

Cite this

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title = "Mechanism of dynamic NBTI of pMOSFETs",

abstract = "Negative bias temperature instability of pMOSFETs is studied. It is found that there is strong frequency dependence of the parameters shift. At a certain high frequency, the threshold voltage shift is only about half of that generated by dc stress. The possible sources of this dependence are explored. An empirical model is established based on the reduction of Fixed oxide charges. This model is further used to explain some observed phenomena.",

keywords = "Interface traps, Negative bias temperature instability, Threshold voltage, pMOSFETs",

author = "B. Zhu and Suehle, {J. S.} and Bernstein, {J. B.} and Y. Chen",

year = "2004",

language = "אנגלית",

pages = "113--117",

note = "2004 IEEE International Integrated Reliability Workshop Final Report ; Conference date: 18-10-2004 Through 21-10-2004",

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TY - CONF

T1 - Mechanism of dynamic NBTI of pMOSFETs

AU - Zhu, B.

AU - Suehle, J. S.

AU - Bernstein, J. B.

AU - Chen, Y.

PY - 2004

Y1 - 2004

N2 - Negative bias temperature instability of pMOSFETs is studied. It is found that there is strong frequency dependence of the parameters shift. At a certain high frequency, the threshold voltage shift is only about half of that generated by dc stress. The possible sources of this dependence are explored. An empirical model is established based on the reduction of Fixed oxide charges. This model is further used to explain some observed phenomena.

AB - Negative bias temperature instability of pMOSFETs is studied. It is found that there is strong frequency dependence of the parameters shift. At a certain high frequency, the threshold voltage shift is only about half of that generated by dc stress. The possible sources of this dependence are explored. An empirical model is established based on the reduction of Fixed oxide charges. This model is further used to explain some observed phenomena.

KW - Interface traps

KW - Negative bias temperature instability

KW - Threshold voltage

KW - pMOSFETs

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AN - SCOPUS:21644470822

SP - 113

EP - 117

T2 - 2004 IEEE International Integrated Reliability Workshop Final Report

Y2 - 18 October 2004 through 21 October 2004

ER -

Mechanism of dynamic NBTI of pMOSFETs

Abstract

Conference

Keywords

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