Mechanism for reduced NBTI effect under pulsed bias stress conditions

B. Zhu, J. S. Suehle, J. B. Bernstein

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

A series of experiments are conducted to study the physical mechanism of reduced NBTI effects observed under pulsed bias conditions. A reduction of Vth and Ion is observed for pulse periods shorter than critical time constants that are believed to be associated with hole trapping and detrapping processes. A two time constant model is developed to explain the reduction of Vth and Ion as a function of pulse repetition frequency.

Original languageEnglish
Pages (from-to)689-690
Number of pages2
JournalIEEE International Reliability Physics Symposium Proceedings
StatePublished - 2004
Externally publishedYes
Event42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States
Duration: 25 Apr 200429 Apr 2004

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