Magnetic field effect on the roa product of HgCdTe diodes

The performance of Hg1 _ x Cdx Te diodes has been thus far investigated assuming it is controlled only by the p side of the junction. Therefore it has been analyzed using a simplistic one-side diffusion model. In order to examine whether this assumption is valid, we placed Hg_1-xCd_xTe diodes under a magnetic field parallel to the junction plane, and tested its effect on the saturation current. Due to the high mobility ratio, the magnetic field supresses the electron component of the saturation current, while that of the holes is hardly affected. Therefore, it enables a clear separation between the two components. The results prove that the contribution of the n +region is comparable to that of the other side and should not be disregarded. We analyze the effect of carrier concentration gradient on the roa product, generating a drift term and affecting the lifetime. The expressions obtained for the saturation current indicate a considerable drift term; however, it still is inversely proportional to the square of the intrinsic carrier concentration.