Luminescence of Bi4Ge3O12 (BGO) crystals under KrF and XeF laser excitation

L. Nagli

doi:10.1016/0022-2313(93)90034-K

Luminescence of Bi₄Ge₃O₁₂ (BGO) crystals under KrF and XeF laser excitation

L. Nagli

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The results of a study of the luminescence of Bi₄Ge₃O₁₂ (BGO) crystals at low excitation intensity by a KrF laser (hv = 4.98 eV) and a two-photon excitation by an intense XeF laser (2hv = 7 eV) confirm that the main emission band (2.5 eV) is due to optical transitions in local Bi³⁺ ions. Under intense KrF laser excitation a broad structureless emission is observed. This emission may be assigned to the intraband optical transitions of highly excited electrons in the conduction band.

Original language	English
Pages (from-to)	139-143
Number of pages	5
Journal	Journal of Luminescence
Volume	55
Issue number	3
DOIs	https://doi.org/10.1016/0022-2313(93)90034-K
State	Published - 1993
Externally published	Yes

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title = "Luminescence of Bi4Ge3O12 (BGO) crystals under KrF and XeF laser excitation",

abstract = "The results of a study of the luminescence of Bi4Ge3O12 (BGO) crystals at low excitation intensity by a KrF laser (hv = 4.98 eV) and a two-photon excitation by an intense XeF laser (2hv = 7 eV) confirm that the main emission band (2.5 eV) is due to optical transitions in local Bi3+ ions. Under intense KrF laser excitation a broad structureless emission is observed. This emission may be assigned to the intraband optical transitions of highly excited electrons in the conduction band.",

author = "L. Nagli",

year = "1993",

doi = "10.1016/0022-2313(93)90034-K",

language = "אנגלית",

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pages = "139--143",

journal = "Journal of Luminescence",

issn = "0022-2313",

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T1 - Luminescence of Bi4Ge3O12 (BGO) crystals under KrF and XeF laser excitation

AU - Nagli, L.

PY - 1993

Y1 - 1993

N2 - The results of a study of the luminescence of Bi4Ge3O12 (BGO) crystals at low excitation intensity by a KrF laser (hv = 4.98 eV) and a two-photon excitation by an intense XeF laser (2hv = 7 eV) confirm that the main emission band (2.5 eV) is due to optical transitions in local Bi3+ ions. Under intense KrF laser excitation a broad structureless emission is observed. This emission may be assigned to the intraband optical transitions of highly excited electrons in the conduction band.

AB - The results of a study of the luminescence of Bi4Ge3O12 (BGO) crystals at low excitation intensity by a KrF laser (hv = 4.98 eV) and a two-photon excitation by an intense XeF laser (2hv = 7 eV) confirm that the main emission band (2.5 eV) is due to optical transitions in local Bi3+ ions. Under intense KrF laser excitation a broad structureless emission is observed. This emission may be assigned to the intraband optical transitions of highly excited electrons in the conduction band.

UR - https://www.scopus.com/pages/publications/0027596742

U2 - 10.1016/0022-2313(93)90034-K

DO - 10.1016/0022-2313(93)90034-K

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AN - SCOPUS:0027596742

SN - 0022-2313

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JO - Journal of Luminescence

JF - Journal of Luminescence

IS - 3

ER -

Luminescence of Bi₄Ge₃O₁₂ (BGO) crystals under KrF and XeF laser excitation

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