Abstract
The results of a study of the luminescence of Bi4Ge3O12 (BGO) crystals at low excitation intensity by a KrF laser (hv = 4.98 eV) and a two-photon excitation by an intense XeF laser (2hv = 7 eV) confirm that the main emission band (2.5 eV) is due to optical transitions in local Bi3+ ions. Under intense KrF laser excitation a broad structureless emission is observed. This emission may be assigned to the intraband optical transitions of highly excited electrons in the conduction band.
Original language | English |
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Pages (from-to) | 139-143 |
Number of pages | 5 |
Journal | Journal of Luminescence |
Volume | 55 |
Issue number | 3 |
DOIs | |
State | Published - 1993 |
Externally published | Yes |