Luminescence of Bi4Ge3O12 (BGO) crystals under KrF and XeF laser excitation

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Abstract

The results of a study of the luminescence of Bi4Ge3O12 (BGO) crystals at low excitation intensity by a KrF laser (hv = 4.98 eV) and a two-photon excitation by an intense XeF laser (2hv = 7 eV) confirm that the main emission band (2.5 eV) is due to optical transitions in local Bi3+ ions. Under intense KrF laser excitation a broad structureless emission is observed. This emission may be assigned to the intraband optical transitions of highly excited electrons in the conduction band.

Original languageEnglish
Pages (from-to)139-143
Number of pages5
JournalJournal of Luminescence
Volume55
Issue number3
DOIs
StatePublished - 1993
Externally publishedYes

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