LOW CAPACITANCE POWER MOSFET WITH AN INTEGRAL GATE DRIVER.

Joseph B. Bernstein; Sandeep Bahl; Martin F. Schlecht

LOW CAPACITANCE POWER MOSFET WITH AN INTEGRAL GATE DRIVER.

Joseph B. Bernstein, Sandeep Bahl, Martin F. Schlecht

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

For efficient operation in the 10-MHz range, a resonant power converter needs a power MOSFET with very low capacitance for a given on-state resistance and an integral turn-off driver. The former allows the resonant frequency to be high and the gate drive losses low, while the latter avoids the parasitic inductance of bond wires used to connect the gate to an external driver. The reasons and methods for making such a MOSFET are presented.

Original language	English
Pages (from-to)	61-68
Number of pages	8
Journal	PESC Record - IEEE Annual Power Electronics Specialists Conference
State	Published - 1987
Externally published	Yes

Cite this

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title = "LOW CAPACITANCE POWER MOSFET WITH AN INTEGRAL GATE DRIVER.",

abstract = "For efficient operation in the 10-MHz range, a resonant power converter needs a power MOSFET with very low capacitance for a given on-state resistance and an integral turn-off driver. The former allows the resonant frequency to be high and the gate drive losses low, while the latter avoids the parasitic inductance of bond wires used to connect the gate to an external driver. The reasons and methods for making such a MOSFET are presented.",

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N2 - For efficient operation in the 10-MHz range, a resonant power converter needs a power MOSFET with very low capacitance for a given on-state resistance and an integral turn-off driver. The former allows the resonant frequency to be high and the gate drive losses low, while the latter avoids the parasitic inductance of bond wires used to connect the gate to an external driver. The reasons and methods for making such a MOSFET are presented.

AB - For efficient operation in the 10-MHz range, a resonant power converter needs a power MOSFET with very low capacitance for a given on-state resistance and an integral turn-off driver. The former allows the resonant frequency to be high and the gate drive losses low, while the latter avoids the parasitic inductance of bond wires used to connect the gate to an external driver. The reasons and methods for making such a MOSFET are presented.

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LOW CAPACITANCE POWER MOSFET WITH AN INTEGRAL GATE DRIVER.

Abstract

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