Skip to main navigation
Skip to search
Skip to main content
Ariel University Home
Help & FAQ
Link opens in a new tab
English
עברית
العربية
Search content at Ariel University
Home
Profiles
Research units
Equipment
Research output
Prizes
Activities
Press/Media
Linearization of BTI Degradation Across Si, SiC, and GaN
Joseph B. Bernstein
, Tsuriel Avraham
, Bin Wang
Department of Electrical and Electronics Engineering
Research output
:
Contribution to journal
›
Review article
›
peer-review
1
Scopus citations
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Linearization of BTI Degradation Across Si, SiC, and GaN'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
SiSiC
100%
Degradation Trajectory
33%
Effective Power
33%
Time Projection
33%
Baseline Effects
33%
Physically Interpretable
33%
GaN Power Device
33%
Representation Basis
33%
Power-law Kinetics
33%
Engineering
Applied Stress
100%
Effective Power
100%
Data Representation
100%
Computer Science
Time Coordinate
100%
Examined System
100%
Initial Value
100%