Latent reliability degradation of ultra-thin oxides after heavy ion and γ-ray irradiation

Bin Wang; J. S. Suehle; E. M. Vogel; J. R. Conley; C. E. Weintraub; A. H. Johnston; J. B. Bernstein

Latent reliability degradation of ultra-thin oxides after heavy ion and γ-ray irradiation

Bin Wang, J. S. Suehle, E. M. Vogel, J. R. Conley, C. E. Weintraub, A. H. Johnston, J. B. Bernstein

Research output: Contribution to conference › Paper › peer-review

7 Scopus citations

Abstract

We studied the effects of heavy ion and γ-ray irradiation on radiation-induced leakage current (RILC) and time-dependent dielectric breakdown (TDDB) life distributions of ultra-thin oxides (<3.5 nm). Thermal annealing experiments were carried out on irradiated devices to study the nature of RILC. TDDB experiments were also performed on irradiated devices with thermal annealing. Our results show that gamma irradiation had a minimal effect on intrinsic TDDB lifetime of ultra-thin oxides. However, heavy ion irradiation induced RILC and substantially reduced the lifetime of ultra-thin oxide films. Thermal annealing experiments suggests that RILC is due to trapped holes. Removal of RILC (and holes) do not improve TDDB lifetime.

Original language	English
Pages	16-19
Number of pages	4
State	Published - 2001
Externally published	Yes
Event	2001 IEEE International Integrated Reliability Workshop Final Report - Lake Tahoe, CA, United States Duration: 15 Oct 2001 → 18 Oct 2001

Conference

Conference	2001 IEEE International Integrated Reliability Workshop Final Report
Country/Territory	United States
City	Lake Tahoe, CA
Period	15/10/01 → 18/10/01

Keywords

Gamma irradiation
Heavy ion irradiation
RILC
Reliability
TDDB

Cite this

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title = "Latent reliability degradation of ultra-thin oxides after heavy ion and γ-ray irradiation",

abstract = "We studied the effects of heavy ion and γ-ray irradiation on radiation-induced leakage current (RILC) and time-dependent dielectric breakdown (TDDB) life distributions of ultra-thin oxides (<3.5 nm). Thermal annealing experiments were carried out on irradiated devices to study the nature of RILC. TDDB experiments were also performed on irradiated devices with thermal annealing. Our results show that gamma irradiation had a minimal effect on intrinsic TDDB lifetime of ultra-thin oxides. However, heavy ion irradiation induced RILC and substantially reduced the lifetime of ultra-thin oxide films. Thermal annealing experiments suggests that RILC is due to trapped holes. Removal of RILC (and holes) do not improve TDDB lifetime.",

keywords = "Gamma irradiation, Heavy ion irradiation, RILC, Reliability, TDDB",

author = "Bin Wang and Suehle, {J. S.} and Vogel, {E. M.} and Conley, {J. R.} and Weintraub, {C. E.} and Johnston, {A. H.} and Bernstein, {J. B.}",

year = "2001",

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TY - CONF

T1 - Latent reliability degradation of ultra-thin oxides after heavy ion and γ-ray irradiation

AU - Wang, Bin

AU - Suehle, J. S.

AU - Vogel, E. M.

AU - Conley, J. R.

AU - Weintraub, C. E.

AU - Johnston, A. H.

AU - Bernstein, J. B.

PY - 2001

Y1 - 2001

N2 - We studied the effects of heavy ion and γ-ray irradiation on radiation-induced leakage current (RILC) and time-dependent dielectric breakdown (TDDB) life distributions of ultra-thin oxides (<3.5 nm). Thermal annealing experiments were carried out on irradiated devices to study the nature of RILC. TDDB experiments were also performed on irradiated devices with thermal annealing. Our results show that gamma irradiation had a minimal effect on intrinsic TDDB lifetime of ultra-thin oxides. However, heavy ion irradiation induced RILC and substantially reduced the lifetime of ultra-thin oxide films. Thermal annealing experiments suggests that RILC is due to trapped holes. Removal of RILC (and holes) do not improve TDDB lifetime.

AB - We studied the effects of heavy ion and γ-ray irradiation on radiation-induced leakage current (RILC) and time-dependent dielectric breakdown (TDDB) life distributions of ultra-thin oxides (<3.5 nm). Thermal annealing experiments were carried out on irradiated devices to study the nature of RILC. TDDB experiments were also performed on irradiated devices with thermal annealing. Our results show that gamma irradiation had a minimal effect on intrinsic TDDB lifetime of ultra-thin oxides. However, heavy ion irradiation induced RILC and substantially reduced the lifetime of ultra-thin oxide films. Thermal annealing experiments suggests that RILC is due to trapped holes. Removal of RILC (and holes) do not improve TDDB lifetime.

KW - Gamma irradiation

KW - Heavy ion irradiation

KW - RILC

KW - Reliability

KW - TDDB

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T2 - 2001 IEEE International Integrated Reliability Workshop Final Report

Y2 - 15 October 2001 through 18 October 2001

ER -

Latent reliability degradation of ultra-thin oxides after heavy ion and γ-ray irradiation

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Conference

Keywords

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