Laser programmable metallic vias

Joseph B. Bernstein; Wei Zhang; Carl H. Nicholas

doi:10.1109/IITC.1998.704793

Laser programmable metallic vias

Joseph B. Bernstein, Wei Zhang, Carl H. Nicholas

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Solid metallic connections have been successfully formed between two standard levels of metallization using a focused IR laser system. This process of laser via formation has successfully made connections with resistances of <0.8 ω. Commercial laser repair systems used extensively by the memory industry were employed to perform over 100,000 individual links over a wide set of laser parameters without failure. This technology provides the yield and reliability necessary for fabrication of rapid turnaround MCM-D, wafer scale integration (WSI), and system-on-A-chip applications. Furthermore, because it is an additive process and the passivation remains completely intact, it lends itself to redundancy for programming high current power and ground lines.

Original language	English
Title of host publication	Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	205-207
Number of pages	3
ISBN (Electronic)	0780342852, 9780780342859
DOIs	https://doi.org/10.1109/IITC.1998.704793
State	Published - 1998
Externally published	Yes
Event	1998 IEEE International Interconnect Technology Conference, IITC 1998 - San Firancisco, United States Duration: 1 Jun 1998 → 3 Jun 1998

Publication series

Name	Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998
Volume	1998-June

Conference

Conference	1998 IEEE International Interconnect Technology Conference, IITC 1998
Country/Territory	United States
City	San Firancisco
Period	1/06/98 → 3/06/98

Access to Document

10.1109/IITC.1998.704793

Cite this

Bernstein, J. B., Zhang, W., & Nicholas, C. H. (1998). Laser programmable metallic vias. In Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998 (pp. 205-207). (Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998; Vol. 1998-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC.1998.704793

@inproceedings{44a5385236c94efda0a55759abba5705,

title = "Laser programmable metallic vias",

abstract = "Solid metallic connections have been successfully formed between two standard levels of metallization using a focused IR laser system. This process of laser via formation has successfully made connections with resistances of <0.8 ω. Commercial laser repair systems used extensively by the memory industry were employed to perform over 100,000 individual links over a wide set of laser parameters without failure. This technology provides the yield and reliability necessary for fabrication of rapid turnaround MCM-D, wafer scale integration (WSI), and system-on-A-chip applications. Furthermore, because it is an additive process and the passivation remains completely intact, it lends itself to redundancy for programming high current power and ground lines.",

author = "Bernstein, {Joseph B.} and Wei Zhang and Nicholas, {Carl H.}",

note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 1998 IEEE International Interconnect Technology Conference, IITC 1998 ; Conference date: 01-06-1998 Through 03-06-1998",

year = "1998",

doi = "10.1109/IITC.1998.704793",

language = "אנגלית",

series = "Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "205--207",

booktitle = "Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998",

address = "ארצות הברית",

}

Bernstein, JB, Zhang, W & Nicholas, CH 1998, Laser programmable metallic vias. in Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998. Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998, vol. 1998-June, Institute of Electrical and Electronics Engineers Inc., pp. 205-207, 1998 IEEE International Interconnect Technology Conference, IITC 1998, San Firancisco, United States, 1/06/98. https://doi.org/10.1109/IITC.1998.704793

Laser programmable metallic vias. / Bernstein, Joseph B.; Zhang, Wei; Nicholas, Carl H.
Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998. Institute of Electrical and Electronics Engineers Inc., 1998. p. 205-207 (Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998; Vol. 1998-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - Solid metallic connections have been successfully formed between two standard levels of metallization using a focused IR laser system. This process of laser via formation has successfully made connections with resistances of <0.8 ω. Commercial laser repair systems used extensively by the memory industry were employed to perform over 100,000 individual links over a wide set of laser parameters without failure. This technology provides the yield and reliability necessary for fabrication of rapid turnaround MCM-D, wafer scale integration (WSI), and system-on-A-chip applications. Furthermore, because it is an additive process and the passivation remains completely intact, it lends itself to redundancy for programming high current power and ground lines.

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Laser programmable metallic vias

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