Laser linking of metal interconnect: Linking dynamics and failure analysis

Roy L. Rasera, Joseph B. Bernstein

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


A novel method of using a laser to connect two adjacent lines on the same level of metallization in integrated circuits was previously developed with programmable gate array applications and customized chips in mind. This work reports a study of failure mechanisms in the laser linking process. Experiments relating critical processing parameters (laser power and target alignment) to the visual failure modes were performed. A focused ion beam (FIB) was used to cross section and image failed links. The images were compared with previously published linking models. Finite element analysis (FEA) was used to simulate laser absorption and subsequent thermal diffusion, and to justify a simple model defining the process window for laser linking. The research correlated theoretical predictions for the failure modes with the critical processing parameters.

Original languageEnglish
Pages (from-to)554-561
Number of pages8
JournalIEEE Transactions on Components Packaging and Manufacturing Technology Part A
Issue number4
StatePublished - Dec 1996
Externally publishedYes


  • Failure analysis
  • Focused ion beam
  • Laser
  • Laser cutting
  • Laser linking
  • Laser processing
  • Laser programmable redundancy
  • Laser restructurable technology
  • Metal interconnect


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