@inproceedings{6fe6da27d8484669b6bd8621e259e5bc,
title = "Laser-induced microfracture leading to high-density metal-to-metal connections",
abstract = "Laser programmed inter-level metal connections have been developed as a means to achieve high density linking for customization in programmable gate arrays and for additive redundancy in restructurable integrated circuits. This work reports on the linking of 4 × 4 μm crossings of standard two-level metal interconnect lines and subsequent microstructural analyses aimed at understanding the mechanism of link formation. The links were formed by focusing a laser on metal 1 through an annular region of metal 2. The mechanism of link formation appears to be a physical connection made by a fracture of the inter-level dielectric (ILD) layer due to the stress of thermal expansion of the metallization with molten metal 2 filling the crack. Focussed ion-beam (FIB) cross sectional micrography and finite element analysis (FEA) have allowed us to analyze the successfully formed links as well as the failures to link. As a result of our analysis, we have begun to understand how to optimize the device geometry for very high reliability laser linking.",
author = "Bernstein, {Joseph B.} and Ventura, {Thomas M.} and Radomski, {Aaron T.}",
year = "1994",
language = "אנגלית",
isbn = "0819416681",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
pages = "165--176",
editor = "Chen, {Fusen E.} and Murarka, {Shyam P.}",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Microelectronics Technology and Process Integration ; Conference date: 20-10-1994 Through 21-10-1994",
}