Investigation of metal-polycrystalline silicon carbide bonding while metallization

G. Golan; V. Manevych; I. Lapsker; B. Gorenstein; A. Axelevitch

doi:10.1109/ICMEL.2006.1650967

Investigation of metal-polycrystalline silicon carbide bonding while metallization

G. Golan, V. Manevych, I. Lapsker, B. Gorenstein, A. Axelevitch

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Polycrystalline silicon carbide heaters o rheated substrates are widely used within the semiconductor industry. The problem of making reliable contacts between such SiC and various metals is most relevant. The main goal of our investigation was an experimental study of molten metals (Fe, Cu, Cr) behavior on top of surfaces of polycrystalline silicon carbide SiC. The mechanism of melt-polycrystalline SiC interaction was found and reported. Non-wetting metal in a liquid phase penetrates into the micro and macro volumes in the polycrystalline SiC surface and holds there due to the residual stresses originated by the difference in the linear expansion coefficients. Metal layers obtained on the poly-crystalline SiC surfaces by the described method were durable and stable.

Original language	English
Title of host publication	2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
Publisher	IEEE Computer Society
Pages	334-337
Number of pages	4
ISBN (Print)	1424401178, 9781424401178
DOIs	https://doi.org/10.1109/ICMEL.2006.1650967
State	Published - 2006
Externally published	Yes
Event	2006 25th International Conference on Microelectronics, MIEL 2006 - Belgrade, Serbia Duration: 14 May 2006 → 17 May 2006

Publication series

Name	2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings

Conference

Conference	2006 25th International Conference on Microelectronics, MIEL 2006
Country/Territory	Serbia
City	Belgrade
Period	14/05/06 → 17/05/06

Access to Document

10.1109/ICMEL.2006.1650967

Cite this

Golan, G., Manevych, V., Lapsker, I., Gorenstein, B., & Axelevitch, A. (2006). Investigation of metal-polycrystalline silicon carbide bonding while metallization. In 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (pp. 334-337). Article 1650967 (2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICMEL.2006.1650967

@inproceedings{0437153c24c940fcae612bb10a46f0f0,

title = "Investigation of metal-polycrystalline silicon carbide bonding while metallization",

abstract = "Polycrystalline silicon carbide heaters o rheated substrates are widely used within the semiconductor industry. The problem of making reliable contacts between such SiC and various metals is most relevant. The main goal of our investigation was an experimental study of molten metals (Fe, Cu, Cr) behavior on top of surfaces of polycrystalline silicon carbide SiC. The mechanism of melt-polycrystalline SiC interaction was found and reported. Non-wetting metal in a liquid phase penetrates into the micro and macro volumes in the polycrystalline SiC surface and holds there due to the residual stresses originated by the difference in the linear expansion coefficients. Metal layers obtained on the poly-crystalline SiC surfaces by the described method were durable and stable.",

author = "G. Golan and V. Manevych and I. Lapsker and B. Gorenstein and A. Axelevitch",

year = "2006",

doi = "10.1109/ICMEL.2006.1650967",

language = "אנגלית",

isbn = "1424401178",

series = "2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings",

publisher = "IEEE Computer Society",

pages = "334--337",

booktitle = "2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings",

address = "ארצות הברית",

note = "2006 25th International Conference on Microelectronics, MIEL 2006 ; Conference date: 14-05-2006 Through 17-05-2006",

}

Golan, G, Manevych, V, Lapsker, I, Gorenstein, B & Axelevitch, A 2006, Investigation of metal-polycrystalline silicon carbide bonding while metallization. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings., 1650967, 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, IEEE Computer Society, pp. 334-337, 2006 25th International Conference on Microelectronics, MIEL 2006, Belgrade, Serbia, 14/05/06. https://doi.org/10.1109/ICMEL.2006.1650967

Investigation of metal-polycrystalline silicon carbide bonding while metallization. / Golan, G.; Manevych, V.; Lapsker, I. et al.
2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. IEEE Computer Society, 2006. p. 334-337 1650967 (2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Investigation of metal-polycrystalline silicon carbide bonding while metallization

AU - Golan, G.

AU - Manevych, V.

AU - Lapsker, I.

AU - Gorenstein, B.

AU - Axelevitch, A.

PY - 2006

Y1 - 2006

N2 - Polycrystalline silicon carbide heaters o rheated substrates are widely used within the semiconductor industry. The problem of making reliable contacts between such SiC and various metals is most relevant. The main goal of our investigation was an experimental study of molten metals (Fe, Cu, Cr) behavior on top of surfaces of polycrystalline silicon carbide SiC. The mechanism of melt-polycrystalline SiC interaction was found and reported. Non-wetting metal in a liquid phase penetrates into the micro and macro volumes in the polycrystalline SiC surface and holds there due to the residual stresses originated by the difference in the linear expansion coefficients. Metal layers obtained on the poly-crystalline SiC surfaces by the described method were durable and stable.

AB - Polycrystalline silicon carbide heaters o rheated substrates are widely used within the semiconductor industry. The problem of making reliable contacts between such SiC and various metals is most relevant. The main goal of our investigation was an experimental study of molten metals (Fe, Cu, Cr) behavior on top of surfaces of polycrystalline silicon carbide SiC. The mechanism of melt-polycrystalline SiC interaction was found and reported. Non-wetting metal in a liquid phase penetrates into the micro and macro volumes in the polycrystalline SiC surface and holds there due to the residual stresses originated by the difference in the linear expansion coefficients. Metal layers obtained on the poly-crystalline SiC surfaces by the described method were durable and stable.

UR - http://www.scopus.com/inward/record.url?scp=77956507599&partnerID=8YFLogxK

U2 - 10.1109/ICMEL.2006.1650967

DO - 10.1109/ICMEL.2006.1650967

M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???

AN - SCOPUS:77956507599

SN - 1424401178

SN - 9781424401178

T3 - 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings

SP - 334

EP - 337

BT - 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings

PB - IEEE Computer Society

T2 - 2006 25th International Conference on Microelectronics, MIEL 2006

Y2 - 14 May 2006 through 17 May 2006

ER -

Golan G, Manevych V, Lapsker I, Gorenstein B, Axelevitch A. Investigation of metal-polycrystalline silicon carbide bonding while metallization. In 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. IEEE Computer Society. 2006. p. 334-337. 1650967. (2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings). doi: 10.1109/ICMEL.2006.1650967

Investigation of metal-polycrystalline silicon carbide bonding while metallization

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this