Abstract
InAs nanostructures on InAlAs/InP(0 0 1) have been fabricated using Stranski-Krastanov growth mode. Depending on growth conditions, a full coverage of the InAlAs surface by either InAs strings of elongated dots or isolated dots can be achieved. Giant intraband absorptions are observed at mid-infrared wavelengths in both nanostructures. The intraband resonances are strongly polarized in the layer plane as a consequence of the quantum confinement along either [1 1 0] and [1 - 10] directions.
| Original language | English |
|---|---|
| Pages (from-to) | 82-83 |
| Number of pages | 2 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 17 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - Apr 2003 |
| Event | Proceedings pf the International Conference on Superlattices - ICSNN 2002 - Touluse, France Duration: 22 Jul 2002 → 26 Jul 2002 |
Keywords
- III-V semiconductors
- Intraband transitions
- Quantum dots
- Quantum wires