Abstract
InAs nanostructures on InAlAs/InP(0 0 1) have been fabricated using Stranski-Krastanov growth mode. Depending on growth conditions, a full coverage of the InAlAs surface by either InAs strings of elongated dots or isolated dots can be achieved. Giant intraband absorptions are observed at mid-infrared wavelengths in both nanostructures. The intraband resonances are strongly polarized in the layer plane as a consequence of the quantum confinement along either [1 1 0] and [1 - 10] directions.
Original language | English |
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Pages (from-to) | 82-83 |
Number of pages | 2 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 17 |
Issue number | 1-4 |
DOIs | |
State | Published - Apr 2003 |
Event | Proceedings pf the International Conference on Superlattices - ICSNN 2002 - Touluse, France Duration: 22 Jul 2002 → 26 Jul 2002 |
Keywords
- III-V semiconductors
- Intraband transitions
- Quantum dots
- Quantum wires