Intraband polaron dynamics of excited carriers in InAs/In xAl 1-xAs quantum dots

G. Bahir, E. Finkman, F. Fossard, F. H. Julien, J. Brault, M. Gendry, S. E. Schacham

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The lifetime of excited carriers in InAs/InAlAs-on-InP quantum dots is investigated using intraband photoconductive (PC) spectra. A method is presented, based on the analysis of temperature dependence and line shape of PC signals, by which the dynamic properties are derived. Detailed analysis of PC measurements is a powerful method of studying the recombination dynamics. Temperature and energy dependencies are governed by strong electron-phonon interaction. The drop in PC signal with temperature is attributed to increased polaron relaxation due to the increased LA phonon population. Recombination at large detuning from LO phonon energy, as opposed to phonon bottleneck, renders an asymmetric line shape. The peak PC signal is redshifted due to an increased lifetime with detuning.

Original languageEnglish
Article number075327
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume71
Issue number7
DOIs
StatePublished - Feb 2005

Fingerprint

Dive into the research topics of 'Intraband polaron dynamics of excited carriers in InAs/In xAl 1-xAs quantum dots'. Together they form a unique fingerprint.

Cite this