Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors

S. Maimon, E. Finkman, G. Bahir, S. E. Schacham, J. M. Garcia, P. M. Petroff

Research output: Contribution to journalArticlepeer-review

285 Scopus citations


Thermal generation rate in quantum dots (QD) can be significantly smaller than in quantum wells, rendering a much improved signal to noise ratio. QDs infrared photodetectors were implemented, composed of ten layers of self-assembled InAs dots grown on GaAs substrate. Low temperature spectral response shows two peaks at low bias, and three at a high one, polarized differently. The electronic level structure is determined, based on polarization, bias, and temperature dependence of the transitions. Although absorbance was not observed, a photoconductive signal was recorded. This may be attributed to a large photoconductive gain due to a relatively long lifetime, which indicates, in turn, a reduced generation rate.

Original languageEnglish
Pages (from-to)2003-2005
Number of pages3
JournalApplied Physics Letters
Issue number14
StatePublished - 1998


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