Interface properties of various passivations of HgCdTe

Keyphrases

• Anodic 100%
• HgCdTe 100%
• Passivation 100%
• Sulfide 100%
• Interface Properties 100%
• N-type 100%
• Low Temperature 50%
• Temperature Rise 50%
• Charge Density 50%
• Skin Layer 50%
• Diode 50%
• Trapping Mechanisms 50%
• ZnS Coating 50%
• Etched Surface 50%
• Device Technology 50%
• High Electron Mobility 50%
• Film Coating 50%
• Flat Band 50%
• Hg1-xCdxTe 50%
• Surface Passivation 50%
• Sulfide Films 50%
• Inversion Layer 50%
• Decreasing Temperature 50%
• Space Charge Region 50%
• Anodic Oxide 50%
• Surface Recombination Velocity 50%
• Bulk Properties 50%
• 2D Electron Gas (2DEG) 50%
• Photoelectromagnetic Effect 50%
• Surface Form 50%

Material Science

• Interface Property 100%
• Sulfide 100%
• Thioether 100%
• Density 33%
• Film 33%
• Oxide Compound 33%
• Surface Passivation 33%
• Electron Mobility 33%