Interface properties of various passivations of HgCdTe

S. E. Schacham, E. Finkman

Research output: Contribution to journalConference articlepeer-review


Various surface passivations of p-type Hg1-xCdxTe were studied to understand their interface properties and and their potential for device technology. Anodic oxide forms an inverted layer near the interface. This n-type skin layer exhibits extremely good n-type properties, which equal, and even surpass, bulk properties. The high electron mobility may be explained by quantization of the electron levels in the space-charge region, and the formation of a two dimensional electron gas near the interface. Thick (∼500 Å) anodic sulfide generates a similar inversion layer. The charge density is proportional to the sulfide thickness. Carefully prepared thin (∼100 Å) anodic sulfide films as well as ZnS coating on freshly etched surfaces, form nearly flatband conditions which are suitable for n+ on p diode technology. The surface recombination velocity, determined for these two passivations using the photoelectromagnetic effect, is shown to be similar at low temperatures, increasing with decreasing temperatures. The dominant trapping mechanism at the surface is similar to that in the bulk, and is probably mostly due to vacancies.

Original languageEnglish
Pages (from-to)198-205
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 12 Sep 1989
Externally publishedYes
EventFuture Infrared Detector Materials 1989 - Orlando, United States
Duration: 27 Mar 198931 Mar 1989


  • Anodic oxidation; Cadmium alloys; II-VI semiconductors; Infrared detectors; Mercury amalgams; Phase interfaces; Photoelectromagnetic effects; Semiconductor alloys; Two dimensional electron gas; Zinc sulfide
  • Device technologies; Flatband conditions; High electron mobility; Interface property; Space charge regions; Surface passivation; Surface recombination velocities; Trapping mechanisms
  • Sulfur compounds


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