Intelligent processing model for the design of multi-parameters microelectronics systems

An intelligent processing model for the design of multi-parameters microelectronics systems was developed and tested on highly conductive transparent indium oxide (In₂O₃) thin films. The films were prepared by DC magnetron sputtering using pure indium oxide targets. Sputtering was done in a pure Argon (Ar) atmosphere. The developed method of Random Partial Sections was applied for the design and optimization of the technological process. The physical model of the sputtering procedure was based on random sections of the parameter's space. The obtained processing model was optimized by the Steep Rise method, using the mathematical model gradient to obtain optimal processing parameters. Active physical parameters of the sputtering process were all independent of each other. For example: Ar pressure during the process, substrate's temperature, target's high voltage, deposition period, etc. As a result of the optimization process, the obtained transparent conductive indium oxide thin films had the following parameters: - Transparency in 550 nm wavelength - 90.7% (including the glass substrate having an absolute transparency of 91.08%); - Resistivity of up to 0.043 Ω·cm for a 2500 angstrom film thickness. Finally, the Random Partial Sections method for the design and optimization of multi-parameters physical process, was found to be a useful instrument for thin films growth.