Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown

Dawei Heh; Eric M. Vogel; Joseph B. Bernstein

doi:10.1063/1.1572466

Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown

Dawei Heh
, Eric M. Vogel
, Joseph B. Bernstein

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown was discussed. It was found that different breakdown mechanisms may dominate or different defects were generated under different stress conditions. The results showed that defects generated by hot holes had little or no influence on breakdown during constant voltage stress (CVS).

Original language	English
Pages (from-to)	3242-3244
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	19
DOIs	https://doi.org/10.1063/1.1572466
State	Published - 12 May 2003
Externally published	Yes

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title = "Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown",

abstract = "Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown was discussed. It was found that different breakdown mechanisms may dominate or different defects were generated under different stress conditions. The results showed that defects generated by hot holes had little or no influence on breakdown during constant voltage stress (CVS).",

author = "Dawei Heh and Vogel, \{Eric M.\} and Bernstein, \{Joseph B.\}",

year = "2003",

month = may,

day = "12",

doi = "10.1063/1.1572466",

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T1 - Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown

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AU - Vogel, Eric M.

AU - Bernstein, Joseph B.

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N2 - Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown was discussed. It was found that different breakdown mechanisms may dominate or different defects were generated under different stress conditions. The results showed that defects generated by hot holes had little or no influence on breakdown during constant voltage stress (CVS).

AB - Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown was discussed. It was found that different breakdown mechanisms may dominate or different defects were generated under different stress conditions. The results showed that defects generated by hot holes had little or no influence on breakdown during constant voltage stress (CVS).

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown

Abstract

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