Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown

Dawei Heh; Eric M. Vogel; Joseph B. Bernstein

doi:10.1063/1.1572466

Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown

Dawei Heh, Eric M. Vogel, Joseph B. Bernstein

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown was discussed. It was found that different breakdown mechanisms may dominate or different defects were generated under different stress conditions. The results showed that defects generated by hot holes had little or no influence on breakdown during constant voltage stress (CVS).

Original language	English
Pages (from-to)	3242-3244
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	19
DOIs	https://doi.org/10.1063/1.1572466
State	Published - 12 May 2003
Externally published	Yes

Access to Document

10.1063/1.1572466

Cite this

@article{430ba4d861f44ad89f085572d7b17ec4,

title = "Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown",

abstract = "Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown was discussed. It was found that different breakdown mechanisms may dominate or different defects were generated under different stress conditions. The results showed that defects generated by hot holes had little or no influence on breakdown during constant voltage stress (CVS).",

author = "Dawei Heh and Vogel, {Eric M.} and Bernstein, {Joseph B.}",

year = "2003",

month = may,

day = "12",

doi = "10.1063/1.1572466",

language = "אנגלית",

volume = "82",

pages = "3242--3244",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown

AU - Heh, Dawei

AU - Vogel, Eric M.

AU - Bernstein, Joseph B.

PY - 2003/5/12

Y1 - 2003/5/12

N2 - Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown was discussed. It was found that different breakdown mechanisms may dominate or different defects were generated under different stress conditions. The results showed that defects generated by hot holes had little or no influence on breakdown during constant voltage stress (CVS).

AB - Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown was discussed. It was found that different breakdown mechanisms may dominate or different defects were generated under different stress conditions. The results showed that defects generated by hot holes had little or no influence on breakdown during constant voltage stress (CVS).

UR - http://www.scopus.com/inward/record.url?scp=0037981328&partnerID=8YFLogxK

U2 - 10.1063/1.1572466

DO - 10.1063/1.1572466

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0037981328

SN - 0003-6951

VL - 82

SP - 3242

EP - 3244

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown

Abstract

Access to Document

Other files and links

Fingerprint

Cite this