III-nitride intersubband photonics

Salam Sakr; Maria Tchernycheva; Juliette Mangeney; Elias Warde; Nathalie Isac; Lorenzo Rigutti; Raffaele Colombelli; Anatole Lupu; Laurent Vivien; François H. Julien; Alon Vardi; Schmuel E. Schacham; Gad Bahir; Yulia Kotsar; Eva Monroy; Etienne Giraud; Denis Martin; Nicolas Grandjean

doi:10.1117/12.900002

III-nitride intersubband photonics

Salam Sakr
, Maria Tchernycheva
, Juliette Mangeney
, Elias Warde
, Nathalie Isac
, Lorenzo Rigutti
, Raffaele Colombelli
, Anatole Lupu
, Laurent Vivien
, François H. Julien
, Alon Vardi
, Schmuel E. Schacham
, Gad Bahir
, Yulia Kotsar
, Eva Monroy
, Etienne Giraud
, Denis Martin
, Nicolas Grandjean

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper reviews the recent progress towards III-nitride intersubband devices based on quantum wells. We first present recent achievements in terms of GaN-based quantum cascade detectors operating at near-infrared wavelengths. We show that these devices are intrinsically extremely fast based on femtosecond time-resolved measurements of the photocurrent. The design of III-nitride quantum cascade detectors, which relies on the engineering of the internal electric field, is flexible enough to allow for two-color detection. We finally discuss the potential of III-nitride intersubband devices in the THz frequency domain and present the recent observation of THz absorption using low aluminium content AlGaN/GaN step quantum wells.

Original language	English
Title of host publication	Gallium Nitride Materials and Devices VII
DOIs	https://doi.org/10.1117/12.900002
State	Published - 2012
Externally published	Yes
Event	Gallium Nitride Materials and Devices VII - San Francisco, CA, United States Duration: 23 Jan 2012 → 26 Jan 2012

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8262
ISSN (Print)	0277-786X

Conference

Conference	Gallium Nitride Materials and Devices VII
Country/Territory	United States
City	San Francisco, CA
Period	23/01/12 → 26/01/12

Keywords

III-nitride semiconductors
intersubband transitions
optoelectronic devices
quantum cascade detectors
quantum wells

Access to Document

10.1117/12.900002

Cite this

Sakr, S., Tchernycheva, M., Mangeney, J., Warde, E., Isac, N., Rigutti, L., Colombelli, R., Lupu, A., Vivien, L., Julien, F. H., Vardi, A., Schacham, S. E., Bahir, G., Kotsar, Y., Monroy, E., Giraud, E., Martin, D., & Grandjean, N. (2012). III-nitride intersubband photonics. In Gallium Nitride Materials and Devices VII Article 82621Q (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8262). https://doi.org/10.1117/12.900002

@inproceedings{35dec21fec5145d88ff1b6ade60c7ad2,

title = "III-nitride intersubband photonics",

abstract = "This paper reviews the recent progress towards III-nitride intersubband devices based on quantum wells. We first present recent achievements in terms of GaN-based quantum cascade detectors operating at near-infrared wavelengths. We show that these devices are intrinsically extremely fast based on femtosecond time-resolved measurements of the photocurrent. The design of III-nitride quantum cascade detectors, which relies on the engineering of the internal electric field, is flexible enough to allow for two-color detection. We finally discuss the potential of III-nitride intersubband devices in the THz frequency domain and present the recent observation of THz absorption using low aluminium content AlGaN/GaN step quantum wells.",

keywords = "III-nitride semiconductors, intersubband transitions, optoelectronic devices, quantum cascade detectors, quantum wells",

author = "Salam Sakr and Maria Tchernycheva and Juliette Mangeney and Elias Warde and Nathalie Isac and Lorenzo Rigutti and Raffaele Colombelli and Anatole Lupu and Laurent Vivien and Julien, \{Fran{\c c}ois H.\} and Alon Vardi and Schacham, \{Schmuel E.\} and Gad Bahir and Yulia Kotsar and Eva Monroy and Etienne Giraud and Denis Martin and Nicolas Grandjean",

year = "2012",

doi = "10.1117/12.900002",

language = "אנגלית",

isbn = "9780819489050",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Gallium Nitride Materials and Devices VII",

note = "Gallium Nitride Materials and Devices VII ; Conference date: 23-01-2012 Through 26-01-2012",

}

Sakr, S, Tchernycheva, M, Mangeney, J, Warde, E, Isac, N, Rigutti, L, Colombelli, R, Lupu, A, Vivien, L, Julien, FH, Vardi, A, Schacham, SE, Bahir, G, Kotsar, Y, Monroy, E, Giraud, E, Martin, D & Grandjean, N 2012, III-nitride intersubband photonics. in Gallium Nitride Materials and Devices VII., 82621Q, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8262, Gallium Nitride Materials and Devices VII, San Francisco, CA, United States, 23/01/12. https://doi.org/10.1117/12.900002

TY - GEN

T1 - III-nitride intersubband photonics

AU - Sakr, Salam

AU - Tchernycheva, Maria

AU - Mangeney, Juliette

AU - Warde, Elias

AU - Isac, Nathalie

AU - Rigutti, Lorenzo

AU - Colombelli, Raffaele

AU - Lupu, Anatole

AU - Vivien, Laurent

AU - Julien, François H.

AU - Vardi, Alon

AU - Schacham, Schmuel E.

AU - Bahir, Gad

AU - Kotsar, Yulia

AU - Monroy, Eva

AU - Giraud, Etienne

AU - Martin, Denis

AU - Grandjean, Nicolas

PY - 2012

Y1 - 2012

N2 - This paper reviews the recent progress towards III-nitride intersubband devices based on quantum wells. We first present recent achievements in terms of GaN-based quantum cascade detectors operating at near-infrared wavelengths. We show that these devices are intrinsically extremely fast based on femtosecond time-resolved measurements of the photocurrent. The design of III-nitride quantum cascade detectors, which relies on the engineering of the internal electric field, is flexible enough to allow for two-color detection. We finally discuss the potential of III-nitride intersubband devices in the THz frequency domain and present the recent observation of THz absorption using low aluminium content AlGaN/GaN step quantum wells.

AB - This paper reviews the recent progress towards III-nitride intersubband devices based on quantum wells. We first present recent achievements in terms of GaN-based quantum cascade detectors operating at near-infrared wavelengths. We show that these devices are intrinsically extremely fast based on femtosecond time-resolved measurements of the photocurrent. The design of III-nitride quantum cascade detectors, which relies on the engineering of the internal electric field, is flexible enough to allow for two-color detection. We finally discuss the potential of III-nitride intersubband devices in the THz frequency domain and present the recent observation of THz absorption using low aluminium content AlGaN/GaN step quantum wells.

KW - III-nitride semiconductors

KW - intersubband transitions

KW - optoelectronic devices

KW - quantum cascade detectors

KW - quantum wells

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BT - Gallium Nitride Materials and Devices VII

T2 - Gallium Nitride Materials and Devices VII

Y2 - 23 January 2012 through 26 January 2012

ER -

III-nitride intersubband photonics

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