III-nitride intersubband photonics

Salam Sakr, Maria Tchernycheva, Juliette Mangeney, Elias Warde, Nathalie Isac, Lorenzo Rigutti, Raffaele Colombelli, Anatole Lupu, Laurent Vivien, François H. Julien, Alon Vardi, Schmuel E. Schacham, Gad Bahir, Yulia Kotsar, Eva Monroy, Etienne Giraud, Denis Martin, Nicolas Grandjean

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


This paper reviews the recent progress towards III-nitride intersubband devices based on quantum wells. We first present recent achievements in terms of GaN-based quantum cascade detectors operating at near-infrared wavelengths. We show that these devices are intrinsically extremely fast based on femtosecond time-resolved measurements of the photocurrent. The design of III-nitride quantum cascade detectors, which relies on the engineering of the internal electric field, is flexible enough to allow for two-color detection. We finally discuss the potential of III-nitride intersubband devices in the THz frequency domain and present the recent observation of THz absorption using low aluminium content AlGaN/GaN step quantum wells.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices VII
StatePublished - 2012
Externally publishedYes
EventGallium Nitride Materials and Devices VII - San Francisco, CA, United States
Duration: 23 Jan 201226 Jan 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceGallium Nitride Materials and Devices VII
Country/TerritoryUnited States
CitySan Francisco, CA


  • III-nitride semiconductors
  • intersubband transitions
  • optoelectronic devices
  • quantum cascade detectors
  • quantum wells


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