Hot-Probe method for evaluation of impurities concentration in semiconductors

Electrical, optical, and mechanical properties of thin films significantly differ from those of bulk materials. Therefore, characterization methods for evaluation of thin film properties became highly important. A novel approach to the well known "Hot-Probe" method is proposed and applied in our work. The conventional Hot Probe characterization method enables only the definition of a semiconductor type, P or N, by identifying the majority charged carriers. According to the new Hot Probe technique, one can measure and calculate the majority charged carriers concentration and its dynamic parameters. Feasibility proof of the upgraded Hot Probe method was done in Si and Ge bulk, and in thin film semiconductor samples.