High power high voltage bias-T for half wave resonators and radio frequency quadrupole couplers

B. Kaizer, L. Weissman, A. Perry, T. Zchut, I. Fishman, J. Rodnizki, M. Eizenshtat, E. Farber

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

High power high voltage bias-T units capable of delivering up to 100 kW CW RF power at 176 MHz and up to 4 kV DC were developed at the Soreq Nuclear Research Center for the Soreq Applied Research Accelerator Facility linac. Two separate bias-T units with different requirements were designed for the radio frequency quadrupole couplers and the half wave resonator couplers. The purpose of this bias-T is to prevent multipacting phenomena by application of a high voltage DC bias to inner conductors of RF couplers. Underlying design principles, indigenous development, and successful off-line and on-line tests results are presented.

Original languageEnglish
Article number053304
JournalReview of Scientific Instruments
Volume93
Issue number5
DOIs
StatePublished - 1 May 2022

Fingerprint

Dive into the research topics of 'High power high voltage bias-T for half wave resonators and radio frequency quadrupole couplers'. Together they form a unique fingerprint.

Cite this