High-gain photorefractive two-beam coupling in semi-insulating GaAs with pump-controlled suppression of the Schottky barrier

Doron Chomsky; Shmuel Sternklar; Arie Zigler; Steven Jackel

doi:10.1063/1.103654

High-gain photorefractive two-beam coupling in semi-insulating GaAs with pump-controlled suppression of the Schottky barrier

Doron Chomsky, Shmuel Sternklar, Arie Zigler, Steven Jackel

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Suppression of the Schottky barrier effect in semi-insulating GaAs is demonstrated by centering the pump irradiation on the reverse bias crystal-electrode interface. A photorefractive gain coefficient Γ of 2.7 cm^-1 is achieved. The irradiation suppression overcomes the need for externally applied ohmic contacts.

Original language	English
Pages (from-to)	422-424
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	5
DOIs	https://doi.org/10.1063/1.103654
State	Published - 1990
Externally published	Yes

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10.1063/1.103654

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title = "High-gain photorefractive two-beam coupling in semi-insulating GaAs with pump-controlled suppression of the Schottky barrier",

abstract = "Suppression of the Schottky barrier effect in semi-insulating GaAs is demonstrated by centering the pump irradiation on the reverse bias crystal-electrode interface. A photorefractive gain coefficient Γ of 2.7 cm-1 is achieved. The irradiation suppression overcomes the need for externally applied ohmic contacts.",

author = "Doron Chomsky and Shmuel Sternklar and Arie Zigler and Steven Jackel",

year = "1990",

doi = "10.1063/1.103654",

language = "אנגלית",

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pages = "422--424",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - High-gain photorefractive two-beam coupling in semi-insulating GaAs with pump-controlled suppression of the Schottky barrier

AU - Chomsky, Doron

AU - Sternklar, Shmuel

AU - Zigler, Arie

AU - Jackel, Steven

PY - 1990

Y1 - 1990

N2 - Suppression of the Schottky barrier effect in semi-insulating GaAs is demonstrated by centering the pump irradiation on the reverse bias crystal-electrode interface. A photorefractive gain coefficient Γ of 2.7 cm-1 is achieved. The irradiation suppression overcomes the need for externally applied ohmic contacts.

AB - Suppression of the Schottky barrier effect in semi-insulating GaAs is demonstrated by centering the pump irradiation on the reverse bias crystal-electrode interface. A photorefractive gain coefficient Γ of 2.7 cm-1 is achieved. The irradiation suppression overcomes the need for externally applied ohmic contacts.

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DO - 10.1063/1.103654

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VL - 57

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EP - 424

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

High-gain photorefractive two-beam coupling in semi-insulating GaAs with pump-controlled suppression of the Schottky barrier

Abstract

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