High-gain photorefractive two-beam coupling in semi-insulating GaAs with pump-controlled suppression of the Schottky barrier

Doron Chomsky, Shmuel Sternklar, Arie Zigler, Steven Jackel

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Suppression of the Schottky barrier effect in semi-insulating GaAs is demonstrated by centering the pump irradiation on the reverse bias crystal-electrode interface. A photorefractive gain coefficient Γ of 2.7 cm-1 is achieved. The irradiation suppression overcomes the need for externally applied ohmic contacts.

Original languageEnglish
Pages (from-to)422-424
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number5
DOIs
StatePublished - 1990
Externally publishedYes

Fingerprint

Dive into the research topics of 'High-gain photorefractive two-beam coupling in semi-insulating GaAs with pump-controlled suppression of the Schottky barrier'. Together they form a unique fingerprint.

Cite this