Abstract
Suppression of the Schottky barrier effect in semi-insulating GaAs is demonstrated by centering the pump irradiation on the reverse bias crystal-electrode interface. A photorefractive gain coefficient Γ of 2.7 cm-1 is achieved. The irradiation suppression overcomes the need for externally applied ohmic contacts.
Original language | English |
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Pages (from-to) | 422-424 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 57 |
Issue number | 5 |
DOIs | |
State | Published - 1990 |
Externally published | Yes |