Heavy-ion-induced soft breakdown of thin gate oxides

J. F. Conley; J. S. Suehle; A. H. Johnston; B. Wang; T. Miyahara; E. M. Vogel; J. B. Bernstein

doi:10.1109/23.983150

Heavy-ion-induced soft breakdown of thin gate oxides

J. F. Conley
, J. S. Suehle
, A. H. Johnston
, B. Wang
, T. Miyahara
, E. M. Vogel
, J. B. Bernstein

Research output: Contribution to journal › Conference article › peer-review

49 Scopus citations

Abstract

Heavy-ion induced soft and hard breakdown of thin gate oxide films was investigated. The heavy-ion-induced breakdown was studied as a function of linear energy transfer (LET), fluence and voltage applied during irradiation. The post irradiation oxide conduction was described by the Suñe quantum point contact model.

Original language	English
Pages (from-to)	1913-1916
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	48
Issue number	6 I
DOIs	https://doi.org/10.1109/23.983150
State	Published - Dec 2001
Externally published	Yes
Event	2001 Nuclear and Sapce Radiation Effects Conference (NSREC) - Vancouver, BC, Canada Duration: 16 Jul 2001 → 20 Jul 2001

Keywords

Dielectric breakdown
Gate oxide
Heavy ions
MOS
Microelectronics
Radiation
SiO

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10.1109/23.983150

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title = "Heavy-ion-induced soft breakdown of thin gate oxides",

abstract = "Heavy-ion induced soft and hard breakdown of thin gate oxide films was investigated. The heavy-ion-induced breakdown was studied as a function of linear energy transfer (LET), fluence and voltage applied during irradiation. The post irradiation oxide conduction was described by the Su{\~n}e quantum point contact model.",

keywords = "Dielectric breakdown, Gate oxide, Heavy ions, MOS, Microelectronics, Radiation, SiO",

author = "Conley, \{J. F.\} and Suehle, \{J. S.\} and Johnston, \{A. H.\} and B. Wang and T. Miyahara and Vogel, \{E. M.\} and Bernstein, \{J. B.\}",

note = "Funding Information: Manuscript received July 17, 2001. This work was supported under contract by the National Aeronautics and Space Administration. J. F. Conley, Jr., A. H. Johnston, and T. Miyahira are with the NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109 USA (e-mail: [email protected]). J. S. Suehle and E. M. Vogel are with the Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA. B. Wang and J. B. Bernstein are with the Center for Reliability Engineering, University of Maryland, College Park, MD 20742 USA. Publisher Item Identifier S 0018-9499(01)10669-6.; 2001 Nuclear and Sapce Radiation Effects Conference (NSREC) ; Conference date: 16-07-2001 Through 20-07-2001",

year = "2001",

month = dec,

doi = "10.1109/23.983150",

language = "אנגלית",

volume = "48",

pages = "1913--1916",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6 I",

}

TY - JOUR

T1 - Heavy-ion-induced soft breakdown of thin gate oxides

AU - Conley, J. F.

AU - Suehle, J. S.

AU - Johnston, A. H.

AU - Wang, B.

AU - Miyahara, T.

AU - Vogel, E. M.

AU - Bernstein, J. B.

N1 - Funding Information: Manuscript received July 17, 2001. This work was supported under contract by the National Aeronautics and Space Administration. J. F. Conley, Jr., A. H. Johnston, and T. Miyahira are with the NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109 USA (e-mail: [email protected]). J. S. Suehle and E. M. Vogel are with the Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA. B. Wang and J. B. Bernstein are with the Center for Reliability Engineering, University of Maryland, College Park, MD 20742 USA. Publisher Item Identifier S 0018-9499(01)10669-6.

PY - 2001/12

Y1 - 2001/12

N2 - Heavy-ion induced soft and hard breakdown of thin gate oxide films was investigated. The heavy-ion-induced breakdown was studied as a function of linear energy transfer (LET), fluence and voltage applied during irradiation. The post irradiation oxide conduction was described by the Suñe quantum point contact model.

AB - Heavy-ion induced soft and hard breakdown of thin gate oxide films was investigated. The heavy-ion-induced breakdown was studied as a function of linear energy transfer (LET), fluence and voltage applied during irradiation. The post irradiation oxide conduction was described by the Suñe quantum point contact model.

KW - Dielectric breakdown

KW - Gate oxide

KW - Heavy ions

KW - MOS

KW - Microelectronics

KW - Radiation

KW - SiO

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DO - 10.1109/23.983150

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SP - 1913

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JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6 I

T2 - 2001 Nuclear and Sapce Radiation Effects Conference (NSREC)

Y2 - 16 July 2001 through 20 July 2001

ER -

Heavy-ion-induced soft breakdown of thin gate oxides

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Keywords

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