TY - JOUR
T1 - General technological modeling method for the design of transparent conductive In2O3 electrodes
AU - Golan, G.
AU - Axelevitch, A.
AU - Rabinovitch, E.
PY - 1998
Y1 - 1998
N2 - Highly conductive transparent indium oxide (In2O3) thin films were prepared by DC magnetron sputtering using pure indium oxide targets in a pure argon (Ar) atmosphere. A linear programming method for the design and optimization of the process was used. The physical model of the sputtering process was based on randomly selected sections of the parameter space. The processing model was optimized by the "steep rise" method, using the mathematical model gradient to obtain optimal parameters. The active independent factors of the sputtering process were Ar pressure during the process, substrate temperature, target voltage and deposition time. As a result of the optimization process, the transparent conductive indium oxide thin films had the following characteristics: Transmittance (T) was 90.7% at λ = 550 nm on glass substrates with an uncoated external T = 91.1% and resistivity of up to 0.043 Ω cm for a 250 nm film thickness. Thus, the linear model method for the design and optimization of this multiparameter physical process was effective.
AB - Highly conductive transparent indium oxide (In2O3) thin films were prepared by DC magnetron sputtering using pure indium oxide targets in a pure argon (Ar) atmosphere. A linear programming method for the design and optimization of the process was used. The physical model of the sputtering process was based on randomly selected sections of the parameter space. The processing model was optimized by the "steep rise" method, using the mathematical model gradient to obtain optimal parameters. The active independent factors of the sputtering process were Ar pressure during the process, substrate temperature, target voltage and deposition time. As a result of the optimization process, the transparent conductive indium oxide thin films had the following characteristics: Transmittance (T) was 90.7% at λ = 550 nm on glass substrates with an uncoated external T = 91.1% and resistivity of up to 0.043 Ω cm for a 250 nm film thickness. Thus, the linear model method for the design and optimization of this multiparameter physical process was effective.
UR - http://www.scopus.com/inward/record.url?scp=0032337236&partnerID=8YFLogxK
U2 - 10.1116/1.581391
DO - 10.1116/1.581391
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???
AN - SCOPUS:0032337236
SN - 0734-2101
VL - 16
SP - 2614
EP - 2618
JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
IS - 4
ER -